邱顯欽 Hsien-Chin Chiu

Journal Papers

  1. Hsien-Chin Chiu, Feng-Tso Chien, Shih-Cheng Yang, Chin-Wei Kuo, and Yi-Jen Chan, “Reducing source and drain resistances in InGaP/InGaAs doped-channel HFETs using δ-doping Schottky layer,” Electronics. Lett., vol.36, pp.1320-1322, 2000. (NSC89-2219-E-008-003)
  2. Hsien-Chin Chiu, Shih-Cheng Yang, Yi-Jen Chan, Jenn-Ming Kuo,“High schottky barrier Al0.5In0.5P/InGaAs doped-channel HFETs with superior microwave power performance,” Electronics. Lett., vol.36, pp.1968-1969, 2000. (NSC89-2219-E-008-003)
  3. Shih-Cheng Yang, Hsien-Chin Chiu, Feng-Tso Chien, Yi-Jen Chan, Jenn-Ming Kuo “RIE Gate-Recessed (Al0.3Ga0.7)0.5In0.5P/InGaAs Double Doped-Channel FETs Using CHF3+BCl3 Mixing Plasma,” IEEE, Electron Device Lett., vol. 22, pp. 170-172, 2001. (NSC90-2219-E-008-001)
  4. Hsien-Chin Chiu, Shih-Cheng Yang, Feng-Tso Chien, Yi-Jen Chan, “High Power Density of AlGaAs/InGaAs Doped-channel FETs with Low DC Power Supply” Electronics. Lett., vol.37, pp.597-598, 2001. (NSC90-2219-E-008-001) 
  5. Hsien-Chin Chiu, Shih-Cheng Yang, Yi-Jen Chan, and Hao-Hsiung Lin, “High Power In0.49Ga0.51P/In0.15Ga0.85As Heterostructure Doped-channel FETs” IEICE Transaction. on Electronics, vol. E84-C, pp.1312-1317, 2001. (NSC90-2219-E-008-001)
  6. Feng-Tso Chien, Hsien-Chin Chiu, Shin-Cheng Yang, Chii-Wen Chen, and Yi-Jen Chan “Device Linearity and Gate Voltage Swing Improvement by Al0.3Ga0.7As/In0.15Ga0.85As Double Doped-channel Design” IEICE Transaction. on Electronics, vol. E84-C, pp.1306-1311, 2001. (NSC90-2219-E-008-001)
  7. Hsien-Chin Chiu, Shih-Cheng Yang, and Yi-Jen Chan, “AlGaAs/InGaAs Heterostructure Doped-channel FETs Exhibiting Good Electrical Performance at High Temperatures” IEEE Trans. Electron Device , vol 48, pp.2210-2215, 2001. (NSC90-2219-E-008-001)
  8. Shih-Cheng Yang, Hsien-Chin Chiu, Yi-Jen Chan, Hao-Hsiung Lin, Jenn-Ming Kuo “(AlxGa1-x)0.5In0.5P/In0.15Ga0.85As (x=0, 0.3, 1.0) Heterostructure Doped-Channel FETs for Microwave Power Applications” IEEE Trans. Electron Device ,vol 48, pp.2906-2910, 2001. (NSC90-2219-E-008-001)
  9. Hsien-Chin Chiu, Shih-Cheng Yang, Feng-Tso Chien, and Yi-Jen Chan, “Improved  Device Linearity of AlGaAs/InGaAs HFETs By a Second Mesa Etching” IEEE, Electron Device Lett., vol. 23, pp. 1-3, 2002. (NSC90-2219-E-008-001) (impact factor=2.093 )
  10. Hsien-Chin Chiu, Ming-Jyh Hwu, Shih-Cheng Yang, and Yi-Jen Chan, “Enhanced Power  Performance of Enhancement-Mode Al0.5Ga0.5As/ In0.15Ga0.85As pHEMTs Using A Low-k BCB Passivation”.IEEE, Electron Device Lett., vol. 24, pp.243-245, 2002. (NSC90-2219-E-008-001) (impact factor=2.093 )
  11. Hsien-Chin Chiu, Shih-Cheng Yang and Yi-Jen Chan, “High power density and large voltage swing of enhancement-mode AlGaAs/InGaAs pHEMTs for 3.5V L-band applications,” Jpn. J. Appl. Phys. vol. 41, Pt.1, No. 5A, pp.2902-2903, 2002. (NSC90-2219-E-008-001)
  12. Hsien-Chin Chiu, Tsung-Jung Yeh, Shih-Cheng Yang, Ming-Jyh Hwu, and Yi-Jen Chan, “High Performance BCB-Bridged AlGaAs/InGaAs Power HFETs” IEEE Trans. Electron Device vol. 50, pp.1532-1536, 2003. (NSC91-2215-E-008-026) (impact factor=1.936 )
  13. Shih-Cheng Yang, Hsien-Chin Chiu, Ming-Jyh Hwu, Wen-Kai Wang, Cheng-Kuo Lin,  and Yi-Jen Chan, “Submicron RIE Recessed InGaP/InGaAs Doped-channel FETs” IEEE Trans. Electron Device ,vol. 50, pp.1555-1558, 2003. (NSC91-2215-E-008-026)
  14. Hsien-Chin Chiu, Shih-Cheng Yang, Yi-Jen Chan, Shu-Han Chen, Wei Sheng Liu, and  Jen-Inn. Chyi, “The Microwave Power Performance Comparisons of AlxGa1-xAs/In0.15Ga0.85As (x=0.3, 0.5, 0.7, 1.0) Doped-Channel HFETs” IEEE Trans. Electron Device ,vol. 51, pp.156-158, 2004.(NSC91-2215-E-008-026) (impact factor=2.215 )
  15. Ming-Jyh Hwu, Hsien-Chin Chiu, Shih-Cheng Yang and Yi-Jen Chan, “A Novel Double-Recessed 0.2 μm T-Gate Process for Heterostructure InGaP/InGaAs Doped-Channel FET Fabrication” IEEE, Electron Device Lett., vol. 24, pp. 381-383, 2003. (NSC91-2215-E-008-026)
  16. Hsing-Yuan Tu, Tao-Hsuan Chou, Yo-Sheng Lin, Hsien-Chin Chiu, Ping-Yu Chen, and Shey-Shi Lu, “DC and RF Characteristics of E-mode Ga0.51In0.49P/In0.15Ga0.85As Pseudomorphic HEMT’s (pHEMT’s)” IEEE, Electron Device Lett., vol. 24, pp. 132-134, 2003. (NSC91-2215-E-008-026)
  17. Ming-Jyh Hwu, Hsien-Chin Chiu, Shih-Cheng Yang, Yi-Jen Chan and Liann-Be Chang, “Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs DCFETs” Jpn. J. Appl. Phys. vol. 43, No.1, pp.111-112, 2003. (NSC91-2215-E-008-026)
  18. Hsien-Chin Chiu, Shih-Cheng Yang, Cheng-Kuo Lin, Ming-Jyh Hwu, Yi-Jen Chan, “0.2 m Gate-Length InGaP/InGaAs DCFET for C-Band MMIC Amplifier Applications” IEEE Trans. Electron Device ,vol. 50, pp.1599-1603, 2003. (NSC91-2215-E-008-026) (impact factor=1.936 )
  19. Hsien-Chin Chiu, Shih-Cheng Yang, Cheng-Kuo Lin, Ming-Jyh Hwu, H. K. Chiou, Yi-Jen  Chan, “K-Band Monolithic InGaP/InGaAs DCFET Amplifier Using BCB Coplanar Waveguide Technology” IEEE, Electron Device Lett., vol. 25, pp. 253-255, 2004. (NSC91-2215-E-008-026) (impact factor=2.732, 15/209 )
  20. W. S. Tung, H. C. Chiu, Y. C. Chiang, “Implementation of millimeter-wave bandpass filter with MMIC technology” Electronics. Lett., vol.41, pp.744-745, 2005. (Impact Factor = 0.98,72/209) 
  21. Hsien-Chin Chiu, Yi-Chyun Chiang, Chan-Shin Wu, “A low insertion loss switch using ordering InGaP/AlGaAs/InGaAs pHEMT technology” Solid-State Electronics, vol.49, pp. 1391-1395, 2005. (NSC-93-2215-E-182-010) (impact factor=1.212, 53/209 )
  22. Hsien-Chin Chiu, Yi-Chyun Chiang, Chan-Shin Wu, “High Breakdown Voltage (Al0.3Ga0.7)0.5In0.5P/ InGaAs Quasi Enhancement-Mode pHEMT with Field-Plate Technology” IEEE, Electron Device Lett., vol. 26, pp. 701-703, 2005. (NSC-93-2215-E-182-010) (impact factor=2.538, 15/209 )
  23. Hsien-Chin Chiu, Chia-Shih Cheng, Yuan-Jui Shih, “Power and Linearity Comparisons of Gate- and Source-terminated Field-plate Pseudomorphic HEMTs”, Semicond. Sci. Technol., vol. 20, pp. 1183-1186, 2005. (NSC-93-2215-E-182-010) (impact factor=2.152, 22/209)
  24. Feng-Tso Chien, Jin-Mu Yin, Hsien-Chin Chiu, and Yi-Jen Chan, “Device Performance Improvement of InGaP/InGaAs DCFETs”, IEEE, Electron Device Lett., vol. 26, pp. 861-863, 2005. (impact factor=2.538, 15/209 )
  25. Hsien-Chin Chiu, Chia-Shih Cheng, Yuan-Jui Shih, “High Uniformity (Al0.3Ga0.7)0.5In0.5P/ InGaAs Enhancement-Mode Pseudomorphic HEMTs by Selective Succinic Acid Gate Recess” Electrochemical and Solid-State lett., vol. 9, pp. G59-G61, 2006. (NSC94-2215-E- 182-005) (impact factor=2.2, 10/22 )
  26. Hsien-Chin Chiu, Chia-Shih Cheng, Yuan-Jui Shih, “High Uniformity Enhancement- and Depletion-Mode InGaP/InGaAs pHEMTs Using Selective Succinic Acid Gate Recess Process” Semicond. Sci. Technol., vol. 21, pp. 55-59, 2006. (NSC94-2215-E- 182-005) (impact factor =1.2, 60/208 )
  27. Chia-Shih Cheng, Yuan-Jui Shih, Hsien-Chin Chiu, “A Modified Angelov Model for InGaP/InGaAs Enhancement- and Depletion-Mode pHEMTs Using Symbolic Defined Device Technology” , Solid-State Electronics, vol 50, pp. 254-258, 2006. (NSC94-2215-E-182-005) (impact factor=1.247, 58/208 )
  28. F. T. Chien, C. N. Liao, C. L. Wang, H. C. Chiu, “ High performance power MOSFETs by wing-cell structure design”, IEICE Transaction. on Electronics, vol. E89-C, no. 5, pp. 591-595, 2006. (impact factor=0.479, 132/208 )
  29. Hsien-Chin Chiu, Chia-Shih Cheng, “Microwave Performance of (Al0.3Ga0.7)0.5In0.5P, In0.5Ga0.5P, Al0.28Ga0.72As Enhancement-mode Pseudomorphic HEMT with Succinic Acid Gate Recess Process” J. Electrohem. Soc. vol 153, pp. G897-G900, 2006. (NSC94-2215-E- 182-005) (impact factor=2.19, 2/19 )
  30. Hsien-Chin Chiu, Liann-Be Chang, Yuan-Chang Huang, Chung-Wen Chen, Yu-Jen Li*, Yi-Jen Chan, “Improved Schottky Leakage Current of ln0.5Al0.5As/In0.5Ga0.5As Metamorphic HEMTs Using (NH4)2Sx Treatment” Electrochemical and Solid-State Lett, vol. 9, pp.G309-G311 2006. (NSC94-2215-E- 182-005) (impact factor=2.152, 10/22 )
  31. Chien-Cheng Wei, Hsien-Chin Chiu, Wu-Shiung Feng, “ High Linearity Performance of 0.13 um CMOS devices using Field-Plate Technology”, IEEE, Electron Device Lett., vol. 27, pp. 843-845, 2006. (impact factor=2.825, 7/208 )
  32. Hsien-Chin Chiu, Chia-Shih Cheng, Chien-Cheng Wei, “Microwave Performance of AlGaAs/InGaAs Pseudomorphic HEMT with Tunable Field-Plate Voltage” Semicond. Sci. Technol., vol. 21, pp. 1432-1436, 2006. (NSC 95-2221-E-182 -058) (impact factor=1.2, 60/208 )
  33. Liann-Be Chang, Chia-Hwa Chang, Ming-Jer Jeng, Hsien-Chin Chiu, and Hung-Fei Kuo, “Barrier Height Enhancement of AlxGa1−xN/GaN Schottky Diodes Prepared by P2S5(NH4)2S Treatments, Electrochemical and Solid-State Lett, vol. 10, pp.H79-H81 2007. (impact factor=2.0, 9/22 )
  34. Chien-Cheng Wei, Hsien-Chin Chiu, Wu-Shiung Feng, "A Low Noise 3.1 to 10.6 GHz pMOS Distributed Amplifier for Ultra-Wideband Applications” Microwave and Optical Technology Letter, vol 49, pp. 1641-1644, 2007. (impact factor=0.568, 125/206 )
  35. C. N. Liao, F. T. Chien, C. L. Wang, H. C. Chiu, Y. J. Chan, “A novel power MOSFET structure with shallow junction dual well design”, IEICE Transaction. on Electronics, vol. E90-C, no. 5, pp. 937-941, 2007. (impact factor=0.508,129/206 )
  36. Chia-Sung Wu, Hsing-Chung Liu, Zhi-Ping Liu, Hsien-Chin Chiu, “Compact K-band bandpass filter on high-k LiNbO3 substrate” Solid-State Electronics, vol.51, pp. 965-968, 2007. (impact factor=1.259, 63/227 )
  37. Chien-Cheng Wei, Hsien-Chin Chiu, Wu-Shiung Feng, “A 12-GHz Low Phase-Noise Voltage-Controlled Oscillator Using Novel Field-Plate CMOS Transistors” IEEE Trans. Electron Device ,vol. 54, pp.2803-2807, 2007. (impact factor=2.165,20/227)
  38. Chia-Song Wu, Hsien-Chin Chiu, “A Power Amplifier MMIC Using the CPW Structure Technology”, Microwave Journal, vol.50, pp.112-124, 2007. (impact factor=0.191,202/227)
  39. Hsien-Chin Chiu, Chung-Wen Chen, Yuan-Chang Huang, “Power Performance of Double Heterojunction High Electron Mobility Transistor with Various Lower/Upper Planar Doping Ratio Designs”, IEEE Trans. Electron Device, vol.55, pp.256-260, 2008. (impact factor=2.73, 28/229)
  40. Hsien-Chin Chiu, Chia-Shih Cheng, Chien-Cheng Wei, Yuan-Jui Shih, Shao-Wei Lin, and Feng-Tso Chien, “An 3-5 GHz Ultra Wideband Low Noise Amplifier Using InGaP/InGaAs Enhancement-Mode pHEMT Technology” Microwave Journal, vol.51, no.6, pp.86-98, 2008. (impact factor=0.52, 164/229)
  41. Chien-Cheng Wei, Hsien-Chin Chiu, and Wu-Shiung Feng, “An Improved BSIM4 Model for 0.13-μm RF CMOS Using a Simple Lossy Substrate Extraction Method” Microwave Journal, vol.51,no.5 pp.170-185, 2008. (impact factor=0.52, 164/229)
  42. Chia-Song Wu, Hsing-Chung Liu, Hsien-Chin Chiu, Wei-Hsien Lee, “Distributed Trans-impedance Amplifiers Using InGaP/InGaAs Enhancement-mode pHEMT Technology” Microwave Journal, vol.51, pp.140-151, 2008. (impact factor=0.52, 164/229)
  43. Hsien-Chin Chiu, Shao-Wei Lin, Chia-Shih Cheng, Chien-Cheng Wei “Microwave Performance of Field-Plate 0.13-μm MOS Transistors with Varying Field-Plate Extension” Solid-State Electronics, vol 52, pp. 725-729, 2008 (impact factor=1.424, 81/229)
  44. Hsien-Chin Chiu, Chia-Shih Cheng , Yi-Tzu Yang , and Chien-Cheng Wei, “A 10 GHz Low Phase-Noise CMOS Voltage-Controlled Oscillator Using Dual-Transformer Technology” Solid-State Electronics, vol 52, pp. 765-770, 2008  (impact factor=1.424, 81/229)
  45. Hsien-Chin Chiu, Yuan-Chang Huang, Chung-Wen Chen, and Liann-Be Chang, “Electrical Characteristics of Passivated Pseudomorphic HEMTs with P2S5/(NH4)2Sx Pretreatment”, IEEE Trans. Electron Device, vol.55, pp.721-726, 2008. (impact factor=2.73, 28/229)
  46. Feng-Tso Chien, Chien-Nan Liao, Jin-Mu Yin, Hsien-Chin Chiu and Yao-Tsung Tsai, “In0.49Ga0.51P/In0.15Ga0.85As doped channel FETs with a metal plug alloy process” Semicond. Sci. Technol., vol. 23, 035009 (5pp), 2008  (impact factor=1.434, 79/229 )
  47. Feng-Tso Chien, Chien-Nan Liao, Chi-Ling Wang, Hsien-Chin Chiu, Yao-Tsung Tsai, “Low On-Resistance Trench Power MOSFETs Design” Electronics. Lett., vol.44, pp.232-234, 2008. (impact factor=1.14, 108/229 )
  48. Hsien-Chin Chiu, Yuan-Chang Huang, Liann-Be Chang, and Feng-Tso Chien, “GaAs Pseudomorphic HEMT With Insulating Gate Films Formed By P2S5/(NH4)2SX Sulfurization of Recessed GaAs Surface”, Semicond. Sci. Technol., vol. 23, 035029 (5pp), 2008  (impact factor=1.434, 79/229 )
  49. Hsien-Chin Chiu, Shao-Wei Lin, Chia-Shih Cheng, Chien-Cheng Wei,“ Comprehensive Study of Gate-terminated and Source-terminated Field-Plate 0.13-μm NMOS Transistors” Semicond. Sci. Technol., vol. 23, 035030 (5pp), 2008. (impact factor=1.434, 79/229 ) 
  50. Hsien-Chin Chiu, Chien-Cheng Wei, Chia-Shih Cheng, Yu-Fei Wu, “Phase-Noise Improvement of GaAs pHEMT K-Band Voltage Controlled Oscillator Using Tunable Field-Plate Voltage Technology”, IEEE, Electron Device Lett., vol. 29, pp. 426-429, 2008. (impact factor=3.049, 23/229 )
  51. Chien-Cheng Wei, Hsien-Chin Chiu, Yi-Tzu Yang, Jeffrey. S. Fu ,and Wu-Shiung Feng, “ An UWB CMOS Voltage-Controlled Oscillator with 2-6GHz Tuning-Range Using Active Inductor Technology”, Microwave and Optical Technology Letter, vol 50, pp. 2311-2315, 2008. (impact factor=0.743, 144/229)
  52. Hsien-Chin Chiu, Che-Kai Lin, Chao-Wei Lin, Ming-Yang Chen, “Enhanced optical responsivity of InAlAs/InGaAs metamorphic HEMT using ITO transparent gate technology”, Appl. Phys. Lett., vol, 93, 043506, 2008, (impact factor=3.726, 10/95 )
  53. Hsien-Chin Chiu, Chih-Wei Yang, Yung-Hsiang Lin, Ray-Ming Lin, Liann-Be Chang, “Device Characteristics of AlGaN/GaN MOS-HEMTs Using High-k Praseodymium Oxide    Layer” IEEE Trans. Electron Device, vol.55, pp.3305-3309, 2008. (impact factor=2.73, 28/229)
  54. Hsien-Chin Chiu, Chao-Wei Lin, Che-Kai Lin, Liann-Be Chang, “Comprehensive Study of GaAs MOSFETs using Gadolinium Oxide and Praseodymium Oxide Layers” J. Electrohem. Soc. vol 155, pp. H955-G958, 2008. (impact factor=2.437, 1/16 )
  55. Hsien-Chin Chiu, Jeffrey. S. Fu, Chung-Wen Chen, “ RF Performance of GaAs pHEMT Switches with Various Upper/Lower δ-Doped Ratio Designs”, Solid-State Electronics, vol 53, pp.181-184, 2009  (impact factor=1.424, 81/229)
  56. Hsien-Chin Chiu, Chia-Shih Cheng, Shao-Wei Lin, Chien-Cheng Wei, “A High-linearity Single-Pole-Double-Throw Pseudomorphic HEMT Switch Based on Tunable Field-Plate Voltage Technology”, IEEE Trans. Electron Device, vol.56, pp.541-545, 2009. (impact factor=2.73, 28/229)
  57. Chun-Ting Pan, Ren-Jie Hou, Yue-Ming Hsin and Hsien-Chin Chiu, “Characteristics of AZO/GaN Heterojunction Bipolar Transistors” Electronics. Lett., vol.45, pp.744-745, 2009. (impact factor=1.14, 108/229)
  58. Hsien-Chin Chiu, Chao-Hung Chen, Chih-Wei Yang, Che-Kai Lin, “ The Characteristics of Dual δ-Doped InGaP/InGaAs pHEMTs with Various Doping Profile” J. Electrohem. Soc. vol 156, pp. H512-H515, 2009. (impact factor=2.437, 1/16 ) 
  59. Chia-Song Wu, Hsing-Chung Liu, Hsien-Chin Chiu and Yi-Feng Lin, “Ka-band Bandpass Filter Using a CPW Structure Technology with Copper on an Al2O3 Substrate”, Microwave Journal, vol.52, pp.102, 2009. (impact factor=0.52, 164/229)
  60. Hsien-Chin Chiu, Po-Yu Ke, Che-Yu Kuo, Jeffrey S. Fu, Chih-Wei Yang and Feng-Tso Chien, “Voltage-controlled oscillator phase noise improvement using GaAs 0.5 μm Pt-buried gate enhancement-mode pHEMT”, Semicond. Sci. Technol., vol. 24, 095003 (5pp), 2009. (impact factor=1.434, 79/229 )
  61. Hsien-Chin Chiu, Chih-Wei Yang, Chao-Hung Chen, Che-Kai Lin, Cheng-Shun Wang, Jeffrey S. Fu, “High Thermal Stability AlGaAs/InGaAs Enhancement-Mode pHEMT Using Iridium Buried-gate Technology”, J. Electrohem. Soc. vol 156, pp. H877-G880, 2009. (impact factor=2.437, 1/16 )
  62. Chien-Cheng Wei, Hsien-Chin Chiu, Yi-Tzu Yang, and Jeffrey S. Fu, “A Novel Complementary Colpitts Differential CMOS VCO with Low Phase Noise Performance”, Microelectronics Journal, vol. 40, pp.1698-1704, 2009 (impact factor=0.859, 132/229 )
  63. Hsien-Chin Chiu, Chao-Wei Lin, Chao-Hung Chen, Chih-Wei Yang, Che-Kai Lin, Jeffrey S. Fu, Liann-Be Chang, Ray-Ming Lin, Kuang-Po Hsueh, “Low Hysteresis Dispersion La2O3 AlGaN/GaN MOS-HEMTs”, J. Electrohem. Soc. vol 157, pp. H160-H164, 2010. (impact factor=2.241, 1/17 )
  64. Hsien-Chin Chiu, Chih-Pin Kao, “ A Wide Tuning Range 69 GHz Push-Push VCO using 0.18μm CMOS Technology”, IEEE Microwave and Wireless Components Letters, vol. 20, pp.97-99, 2010. (impact factor=1.913, 50/246)
  65. Chia-Shih Cheng, Hsien-Chin Chiu, Shao-Wei Lin, Jeffrey S. Fu, “Improved Linearity Performance of AlGaAs/InGaAs Pseudomorphic HEMT Driver Amplifier Using Tunable Field-plate Voltage Technology”, Microwave Journal, vol. 53, no. 10, pp.130-136, 2010. (impact factor=0.512, 174/246)
  66. Chien-Cheng Wei, Hsien-Chin Chiu, Shao-Wei Lin, Ting-Huei Chen, Jeffrey S. Fu, Feng-Tso Chien, “A Comparison Study of CMOS T/R Switches Using Gate/Source-terminated Field-Plate Transistors” Microelectron. Eng., vol. 87, pp.225-229, 2010. (impact factor=1.488, 74/246 )
  67. Jeffrey S. Fu, Po-Yu Ke, Che-Yu Kuo, and Hsien-Chin Chiu, “An X-band Ultra-low Phase Noise Differential Colpitts VCO Using 0.15-μm pHEMT Technology”, International Journal of Electronics, Volume 97, Issue 5, pp. 605 – 611, 2010. (impact factor=0.43, 186/246 )
  68. Feng-Tso Chien, Da-Wei Lin, Chih-Wei Yang, Jeffrey S. Fu and Hsien-Chin Chiu, “A Low Insertion Loss GaAs pHEMT Switch Utilizing Dual n+-Doping AlAs Etching Stop Layers Design” Solid-State Electronics, vol 54, pp.231-234, 2010 (impact factor=1.494, 73/246)
  69. Chien-Cheng Wei, Hsien-Chin Chiu, Hui-Chen Hsu, Wu-Shiung Feng, Jeffrey S. Fu, “ A Fully Integrated 24-GHz Differential Active Sub-harmonic Mixer Located in CMOS Multi-layer Marchand Baluns”, IET Microwaves, Antennas & Propagation, vol. 4, no. 11, pp.1789-1798, 2010. (impact factor=1.077, 114/246)
  70. Hsien-Chin Chiu, Chia-Shih Cheng, “On-State and Off-State Breakdown Voltages in GaAs pHEMTs with Various Field-plate and Gate-recess Extension Structures”, IEEE, Electron Device Lett., vol. 31, pp. 186-188, 2010. (impact factor=2.605, 21/246 )
  71. Jia-Shuan Wu, Chia-Song Wu, Yung-Hsiang Lin, Hsien-Chin Chiu, Ray-Ming Lin, “An Improvement Passive Inductor Microwave Performance on GaN Substrates Using Ion Implantation Technology”, International Journal of Electronics, vol. 97, no. 6, pp.695-701, 2010. (impact factor=0.43, 186/246 )
  72. Jeffrey S. Fu, Che-Yu Kuo, Shao-Wei Lin, Po-Yu Ke, Hsien-Chin Chiu, “A Wideband Gilbert Cell Mixer with an Integrated Marchand Balun Using 0.5μm GaAs Enhancement-Mode pHEMT Technology” Microwave and Optical Technology Letter, vol 52, pp. 1302-1306, 2010. (impact factor=0.682, 156/246)
  73. Hsien-Chin Chiu, Chao-Hung Chen, Chih-Wei Yang, Jeffrey S. Fu, Cheng-Shun Wang, “Electrical and Reliability Characteristics of GaAs MOSHEMTs Utilizing High-k IIIB and IVB Oxide Layers” Microelectronics Reliability, vol. 50, pp.631-634, 2010. (impact factor=1.117, 110/246 )
  74. Jeffrey S. Fu, Dong-Hua Yang, Chin-I Yeh, Hsien-Chin Chiu, Kuo-Sheng Chin, Hsuan-Ling Kao and Jui-Ching Cheng, "Non-uniform Chebyshev Distributed Chirped Dumbbell-Shaped   Photonic Bandgap Structure (PBGs) Low Pass Filter," COMPEL-International Journal For Computation and Mathematics in Electrical and Electronic Engineering, USA, Feb. 2010, pp. 295-305 (impact factor=0.46, 182/246)
  75. S. Z. Rahaman, S. Maikap, Hsien-Chin Chiu, C. H. Lin, T. Y. Wu, Y. S. Chen, P. J. Tzeng, F. Chen, M. J. Kao, M. -J. Tsai, “Bipolar resistive switching memory using Cu metallic filament in Ge0.4Se0.6 solid electrolyte”, Electrochemical and Solid-State Lett, vol. 13, pp.H159-H162, 2010. (impact factor=1.837, 12/24 )
  76. Hsien-Chin Chiu, Chao-Hung Chen, Chih-Wei Yang, Chao-Wei Lin, Che-Kai Lin, Cheng-Shun Wang, Jeffrey S. Fu, “GaAs Enhancement-Mode MOSHEMT with Pt/ZrO2/Ti/Au Composited Gate Structure”, Electrochemical and Solid-State Lett, vol. 13, pp.H188-H190, 2010. (impact factor=1.837, 12/24 )
  77. Hsien-Chin Chiu, Chih-Wei Yang, Chao-Hung Chen, Che-Kai Lin, Jeffrey S. Fu, Hsing-Yuan Tu, Shiang-Feng Tang, “High Thermal Stability AlGaAs/InGaAs Enhancement-Mode PHEMT Using Palladium-gate Technology” Microelectronics Reliability, vol. 50, pp.847-850, 2010. (impact factor=1.117, 110/246 )
  78. Feng-Tso Chien, Chien-Liang Chan, Chi-Ling Wang, Chien-Nan Liao, Yao-Tsung Tsai, Hsien-Chin Chiu, “Low Gate Leakage Current HFET Structure Fabricated by Using a Step-free Airbridge Gate Process”, Journal of the Korean Physical Society, vol. 56, no. 3, pp. 887-890 , 2010. (impact factor=1.328, 26/68 )
  79. Kuang-Po Hsueh, Chun-Ju Tun, Hsien-Chin Chiu, Yu-Ping Huang and Gou-Chung Chi, “Effect of rapid thermal annealing on MgxZn1−xO films prepared by radio-frequency magnetron sputtering”, The Journal of Vacuum Science and Technology B (JVST B), vol. 28, no. 4, pp. 720-723 , 2010, (impact factor=1.46, 77/245)
  80. Po-Yu Ke , Hsien-Chin Chiu, ,Jeffrey S. Fu, “Low Power Dual Transformer Injection Locked Frequency Divider using 0.5μm GaAs E/D-Mode PHEMTs Process”, Microwave and Optical Technology Letter, vol 52, pp. 2302-2306, 2010. (impact factor=0.682, 156/246)
  81. Jeffrey S. Fu, Dong-Hua Yang, Chin-I Yeh, N. C. Karmakar, Jui-Ching Cheng, Kuo-Sheng Chin, Hsien-Chin Chiu and Jian Kang Xiao, “Electromechanical Controlled Phased Array Dumbbell EBG Beam Steerer”, Microelectronics Reliability, vol. 50, pp.2093-2097, 2010. (impact factor=1.117, 110/246 )
  82. Che-Kai Lin, Hsien-Chin Chiu*, Chao-Wei Lin, Hsiang-Chun Wang, Yi-Chun Wu, “Optoelectronic Mixer based on Composite Transparent Gate InAlAs/InGaAs Metamorphic HEMTs”, IEEE/OSA Journal of Lightwave Technology, vol. 28, no15, pp.2153-2161, 2010. (impact factor=2.185, 36/246 )
  83. Hsien-Chin Chiu, Chia-Shih Cheng, Jeffrey S. Fu, Kuang-Po Hsueh, “Harmonics Suppression Investigations of pHEMT Single Pole Single Throw Switches using Multi-gate Structures" Microelectronic Engineering, vol. 87, no.12, pp. 2592-2595, 2010. (impact factor=1.488, 68/229 )
  84. C.-L. Yang, S.-Y. Shu, M.-C. Chiang, H.-C. Chiu, and Y.-C. Chiang, “A dual-mode dual-band filter constructed on GaAs substrate for unlicensed 60- and 77-GHz applications”, Journal of Electromagnetic Waves and Applications, vol. 24, no. 17/18, pp. 2431-2444, 2010. (impact factor=1.551)
  85. Chao-Wei Lin, Hsien-Chin Chiu, Che-Kai Lin, Jeffrey S. Fu, “High-k Praseodymium Oxide Passivated AlGaN/GaN MOSFETs using P2S5/(NH4)2Sx +UV Pretreatment”, Microelectronics Reliability, vol. 51,no.2, pp.381-385, 2011. (impact factor=1.101, 113/247 )
  86. Po-Yu Ke, Hsien-Chin Chiu, Che-Yu Kuo, Jeffrey S. Fu, Yi-Chyun Chiang, “A K-Band Balanced Sub-Harmonically Pumped Image Rejection Mixer Using 0.15-μm GaAs pHEMT Technology” Microwave and Optical Technology Letter, vol 53, no.3, pp. 485-488, 2011. (impact factor=0.656, 167/247)
  87. Hsien-Chin Chiu, Ting-Huei Chen, Jeffrey S. Fu, T. A. Nirmalathas, “A Ka-Band Low Noise Amplifier Using Semi-Circle Stacked-GCPW Transmission Line” Microwave and Optical Technology Letter, vol 53, no.5, pp. 1131-1134, 2011. (impact factor=0.656, 167/247)
  88. Shao-Wei Lin, Hsien-Chin Chiu, and Jeffrey S. Fu, “ High Efficient Ka Band MMIC Frequency Tripler Using Lumped-Element Balun”, IET Microwaves, Antennas & Propagation, vol. 5,no.1, pp. 30-37 (impact factor=0.682, 161/247)
  89. Hsien-Chin Chiu, Che-Kai Lin, Chao-Wei Lin, Chih-Wei Yang, Chao-Hung Chen, Jeffrey S. Fu, “ High Performance AlGaN/GaN HEMT with Lattice Matched ZnO Gate Interlayer”, J. Electrohem. Soc., vol. 158, no. 3, pp. H294-H298, 2011.(impact factor=2.427, 1/18 )
  90. Jeffrey S. Fu, Hsien-Chin Chiu*, Po-Yu Ke, Ting-Huei Chen, Wu-Shiung Feng, “High Performance 90nm Dual-Gate nMOSFETs with Field-Plate Technology” IEEE Electron Device Lett., vol. 32, no.3,pp. 291 – 293, 2011.(impact factor=2.719, 16/247).
  91. Hsien-Chin Chiu, Chao-Hung Chen, Che-Kai Lin, Jeffrey S. Fu, “High Electrical Performance Liquid-Phase HBr Oxidation Gate Insulator of InAlAs/InGaAs Metamorphic MOS-mHEMT”, Microelectronics Reliability. vol. 51, no. 8, pp.1337-1341, 2011(impact factor=1.101, 113/247 )
  92. Qiang Cui, Chia-Shih Cheng, Juin J. Liou, Hsien-Chin Chiu, “Development of New pHEMT-Based Electrostatic Discharge (ESD) Protection Structure” IEEE Trans. Electron Device, vol.58, pp.2974-2980, 2011. (impact factor=2.255, 28/247)
  93. Hsien-Chin Chiu, Chao-Wei Lin, Che-Kai Lin, Hsuan-Ling Kao, Jeffrey S. Fu, “Thermal Stability Investigations of AlGaN/GaN HEMTs with Various High Work Function Gate Metal Designs”, Microelectronics Reliability., vol. 51, no.12, pp. 2163-2167, 2011(impact factor=1.101, 113/247 )
  94. Feng-Tso Chien, Chii-Wen Chen, Chien-Nan Liao, Tien-Chun Lee, Chi-Ling Wang, Ching-Hwa Cheng, Hsien-Chin Chiu, and Yao-Tsung Tsai, “A Novel Self-Aligned Raised Source/Drain Poly-Silicon Thin Film Transistor with High Current Structure”, IEEE Electron Device Lett., vol. 32, pp. 1080 – 1082, 2011 (impact factor=2.714, 14/247).
  95. Hsien-Chin Chiu, Hsiang-Chun Wang, Che-Kai Lin, Chau-Wei Chiu, Jeffrey S. Fu, Kuang-Po Hsueh, and Feng-Tso Chien, “Low Frequency Noise Analysis of Top-Gate MgZnO Thin-Film Transistor with High-κ ZrO2 Gate Insulator”, Electrochemical and Solid-State Lett, vol. 14, no.9, H385-H388, 2011. (impact factor=1.981, 14/26 )
  96. Hsien-Chin Chiu, Chia-Shih Cheng, Jeffrey S. Fu, Qiang Cui, Juin J. Liou, “A Fully On-Chip ESD Protection UWB-band Low Noise Amplifier Using GaAs Enhancement-Mode Dual-Gate pHEMT Technology”, Microelectronics Reliability., vol. 51,no.12,  pp. 2137-2142, 2011 (impact factor=1.101, 113/247 ).
  97. Hsuan-Ling Kao, C.S. Yeh, Li-Chun Chang, Jeffrey S. Fu, Hsien-Chin Chiu, “Improvement of the Q-factor, for an adjustable inductor using a 90-μm silicon substrate on plastic”, International Journal of Electronics, vol. 98, no. 11, pp.1597-1602, 2011. (impact factor=0.43, 186/246 )
  98. Jeffrey S. Fu, Min-Li Chou, Sheng-Chuan Chan and Hsien-Chin Chiu*, “Low-k BCB Based 60 GHz Band Pass Filter on Al2O3 Substrate”, Journal of Electromagnetic Waves and Applications, volume 25, no. 17/18, page 2454-2463, 2011, (impact factor=1.378, 87/247 )
  99. Hsien-Chin Chiu, Chih-Wei Yang, Chao-Hung Chen, Jeffrey S. Fu and Feng-Tso Chien, “Characterization of Enhancement-mode AlGaN/GaN High Electron Mobility Transistor Using N2O Plasma Oxidation Technology” Appl. Phys. Lett., vol. 99, 153508, 2011.(impact factor=3.841, 15/118 ).
  100. Yue-ming Hsin, Tsung-Yu Ke, Geng-Yen Lee, Jen-Inn Chyi, and Hsien-Chin Chiu, “A 600V AlGaN/GaN Schottky barrier diode on silicon substrate with fast reverse recovery time” Physica Status Solidi.C, vol. 9, no.3–4, pp.949–952, 2012.
  101. Chao-Hung Chen, Hsien-Chin Chiu*, Chih-Wei Yang, Jeffrey S. Fu, Feng-Tso Chien, “Novel GaAs Enhancement-Mode/Depletion-Mode pHEMTs Technology Using high-k Praseodymium Oxide Interlayer”, Microelectronics Reliability., vol. 52, pp. 147-150, 2012 (impact factor=1.167, 112/245 ).
  102. Hsien-Chin Chiu, Hsiang-Chun Wang, Che-Kai Lin, Hsuan-Ling Kao, Jeffrey S. Fu, and Kuang-Po Hsueh, “High Breakdown Voltage Enhancement-Mode MgxZn1-xO Thin-Film Transistor Using CF4 Plasma Treatment” Electrochemical and Solid-State Lett,.vol.15, no.2, pp.H20-H22, 2012 (impact factor=1.995 15/27 )
  103. Po-Yu Ke, Hsien-Chin Chiu*, Jeffrey S. Fu, “A Fully Integrated Multi-Band ED-Mode pHEMT VCO Using Variable Transformer and Switched Resonator”, International Journal of Electronics, vol. 99, issue 6, pp.877-884, 2012 (impact factor=0.43, 186/246 )
  104. Hsuan-ling Kao, J. Y. Ke, C. S. Yeh, Hsien-Chin Chiu, and Jeffrey S. Fu, “A 30 to 65 GHz Wideband Double-Balanced Gilbert-Cell Mixer using GaAs pHEMT Technology” Microwave and Optical Technology Letter, vol 54, issue 5, May, pp.1196–1200, 2012.(impact factor=0.682, 156/246)
  105. J. L. Yang, Y. C. Chiang, H.C.Chiu, “Design and Analysis of a Tri-band Dual-mode Chip Filter for 60-/77-/100-GHz Applications”, IEEE Trans. Microw. Theory Tech , vol. 60, no. 4, APRIL, pp. 989-997, 2012
  106. Che-Kai Lin, Hsien-Chin Chiu*, Chao-Wei Lin, Hsuan-ling Kao, Feng-Tso Chien, “Investigation on the thermal behavior of 0.15μm Gate-Length In0.4Al0.6As/In0.4Ga0.6As MHEMT” Microelectronics Reliability. vol. 52, 969-973, 2012 (impact factor=1.167, 112/245 )
  107. Chao-Hung Chen, Chih-Wei Yang, Hsien-Chin Chiu*, Jeffrey. S. Fu, “The characteristic comparison of AlGaN/GaN enhancement-mode HEMTs with CHF3 and CF4 surface treatment” J. Vac. Sci. Technol. B. vol. 30, no.2, 021201, 2012.(impact factor=1.341, 96/245 ).
  108. Hsien-Chin Chiu, Jia-Hsuan Wu, Chih-Wei Yang, Fan-Hsiu Huang and Hsuan-Ling Kao, “Low Frequency Noise in Enhancement-mode GaN MOS-HEMTs by Using Stacked Al2O3/Ga2O3/Gd2O3 Gate Dielectric”, IEEE Electron Device Lett., vol. 33, no. 7, pp. 958 – 960, 2012 (impact factor=2.849, 23/245).
  109. Hsien-Chin Chiu, Che-Kai Lin, Chao-Wei Lin, Chao-Sung Lai, “Investigation of Surface Pretreatments on GaAs and Memory Characteristics of MOS Capacitors embedded with Au nano-particles” Microelectronics Reliability. vol.52, no. 11, pp. 2592-2596(impact factor=1.167, 112/245 )
  110. Chao-Hung Chen, Hsien-Chin Chiu*, Feng-Tso Chien, Hao-Wei Chuang, Kuo-Jen Chang, Yau-Tang Gau, “High Thermal Stability and Low Hysteresis Dispersion AlGaN/GaN MOS-HEMTs with Zirconia Film Design” Microelectronics Reliability. vol.52, no. 11, pp.2551-2555 (impact factor=1.167, 112/245 )
  111. Hsien-Chin Chiu, Chao-Wei Lin, , Hsuan-Ling Kao, Geng-Yen Lee, and Jen-Inn Chyi, Hao-Wei Chuang, Kuo-Jen Chang, Yau-Tang Gau, “A Gold-free Fully Copper Metalized AlGaN/GaN Power HEMTs on Si Substrate”, Microelectronics Reliability. vol.52, no. 11, pp.2556-2560  (impact factor=1.167, 112/245 ).
  112. Hsuan-ling Kao, Chih-Sheng Yeh, Meng-Ting Chen, Hsien-Chin Chiu, Li-Chun Chang, “Characterization and reliability of nMOSFETs on flexible substrates under mechanical strain” Microelectronics Reliability, vol. 52, Issue 6, June, pp. 999-1004, 2012. (impact factor=1.066, 114/247 ).
  113. Hsien-Chin Chiu, Chih-Wei Yang, Chao-Hung Chen, and Jia-Hsuan Wu, “Quality of Oxidation Interface of AlGaN in Enhancement-mode AlGaN/GaN High-Electron-Mobility Transistors” IEEE Trans. Electron Device, vol.59, no. 12, pp.3334-3338, 2012. (impact factor=2.318, 34/245)
  114. Kuang-Po Hsueh, Yi-Chang Cheng, Wen-Yen Lin, Po-Wei Cheng, Hsien-Chin Chiu, Hsiang-Chun Wang, Jinn-Kong Sheu, and Yu-Hsiang Yeh, “High-temperature stability of post-growth-annealed Al-doped MgxZn1-xO films without the phase separation effect”, J. Vac. Sci. Technol. B. vol. 30, no.6, 061201, 2012.(impact factor=1.343, 99/247 ).
  115. H.-L. Kao, C.-S. Yeh, and H.-C. Chiu, "A 60/77 GHz Dual-Band Bandpass Filter with MMIC Technology," Journal of Electromagnetic Waves and Applications (JEMWA), vol. 26, Issue 17-18, December, pp. 2381-2389, 2012. (impact factor=2.965, 17/244)
  116. Hsuan-ling Kao, Chih-Sheng Yeh, Meng-Ting Chen, Hsien-Chin Chiu, Li-Chun Chang, “Characteristics and reliabilities on the Dicing before Grinding (DBG) process in nMOSFETs” Solid-State Electronics, vol. 79, January 2013, pp.111-116. (impact factor=1.482, 88/242)
  117. Feng-Tso Chien, Chii-Wen Chen, Tien-Chun Lee, Chi-Ling Wang, Ching-Hwa Cheng, Tsung-Kuei Kang, and Hsien-Chin Chiu, “A Novel Self-Aligned Double-Channel Poly-Silicon Thin Film Transistor”, IEEE Trans. Electron Device, vol.60, no.2, pp.799-804, 2013. (impact factor=2.062, 44/242)
  118. P.-Y. Ke, F. H. Huang, and H.-C. Chiu*, “A 77 GHz CMOS Frequency Triplers with Subharmonic Injection Locking Technology” Microwave and Optical Technology Letter, vol 55, no.2, pp.434–439, 2013.(impact factor=0.585, 179/243)
  119. Fan-Hsiu Huang, Shao-Wei Lin, Po-Yu Ke, Hsien-Chin Chiu*, “A Wide Bandwidth V-band Balanced Resistive Mixer with a Miniature Meandering Balun”, Microwave and Optical Technology Letter, vol 55, issue 3, Mar, pp.547–550, 2013. (impact factor=0.585, 179/243)
  120. Hsien-Chin Chiu, Chao-Wei Lin, Fan-Hsiu Huang, Hsuan-Ling Kao, Feng-Tso Chien, Hao-Wei Chuang, Kuo-Jen Chang, Yau-Tang Gau, “Low Frequency Noise in Field-plate Multigate AlGaN/GaN Single-Pole-Single-Throw RF Switches on Silicon Substrate” Microelectronics Reliability, vol. 53, no. 3, pp. 405-408, 2013. (impact factor=1.137, 119/243). 
  121. Po-Yu Ke, Fan-Hsiu Huang, Hsuan-Lin Kao, Hsien-Chin Chiu*, “A Wide Tuning Range CMOS Oscillator Mixer Using a Push-Push Technique for V-band Applications”, Microwave and Optical Technology Letter, vol 55, issue 8, Aug, pp.1934–1937, 2013. (impact factor =0.585, 179/242)
  122. Hsuan-ling Kao , C. S. Yeh , Shao-Ping Shih , Hsien-Chin Chiu , Yung-Yu Chen, “High Microwave Power Source for 2.45 GHz Wireless Power Charger Applications”, International Journal of Electronics, vol. 100, issue 3, pp.877-884, 2013 (impact factor=0.509, 194/242 )
  123. Hsuan-ling Kao; Cheng-Lin  Cho; Li-Chun Chang; Chih-Sheng  Yeh; Bo-Wen  Wang; Hsien-Chin Chiu, “Inkjet Printing RF Bandpass Filters on Liquid Crystal Polymer Substrates” Thin Solid Films, vol.544, no.10, pp.64-68, 2013. (impact factor=1.604, 50/127). 
  124. Hsien-Chin Chiu, Hsiang-Chun Wang, Chao-Wei Lin, Yi-Cheng Luo, Hsuan-Ling Kao, Feng-Tso Chien, Ping-Kuo Weng, Yan-Tang Gau, Hao-Wei Chuang, “Low gate interface traps AlGaN/GaN HEMTs using a lattice matched ZrZnO transparent gate design ” Microelectronics Reliability, vol. 53, no. 8, pp. 1130-1136, 2013. (impact factor=1.137, 119/242).
  125. Po-Yu Ke, Hsien-Chin Chiu*, Fan-Hsiu Huang, Hsuan-Liang Kao, Feng-Tsun Chien“ V-band Push-Push VCO Using Slow-Wave CPW Resonators For Low Phase Noise Reduction”, Microwave and Optical Technology Letter, vol 55, issue 10, , pp.2373–2377, 2013. (impact factor=0.585, 179/242)
  126. D. H. Yang, T. H. Liu, P. Y. Ke, W.P. Lin, H.C. Chiu, “E-band SIW H-plane horn antenna development ”,  COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, vol. 32 , (2) , pp. 431-441, 2013. (impact factor=0.281, 221/242)
  127. Hsien-Chin Chiu, Chao-Hung Chen, Hsuan-Ling Kao, Feng-Tso Chien, Ping-Kuo Weng, Yan-Tang Gau, Hao-Wei Chuang, “Sidewall Defects of AlGaN/GaN HEMTs Evaluated by Low Frequency Noise Analysis”, Microelectronics Reliability, vol. 53, no. 12, pp. 1897-1900, 2013. (impact factor=1.137, 119/242).
  128. P. Y. Ke, H.-C. Chiu*, F. H. Huang, Hsuan-Ling Kao, “A Wideband and High Rejection Multimode 60 GHz GaAs Bandpass Filter Using Open Loop CMRC with Controllable Transmission Zeros Technique” Journal of Electromagnetic Waves and Applications (JEMWA), vol. 27, Issue 13 , pp. 1611-1619, 2013. (impact factor=2.965, 17/244)
  129. Hsien-Chin Chiu, Po-Yu Ke and Fan-Hsiu Huang, “A High Output Power V-band GaAs HEMT Push-Pull Power Amplifier Using Meandering Baluns Technology” Journal of Electromagnetic Waves and Applications (JEMWA), vol. 27, Issue , pp. xxx, 2013. (impact factor=2.965, 17/244)
  130. Hsien-Chin Chiu, Hsiang-Chun Wang, Yi-Cheng Luo, Fan-Hsiu Huang, Hsuan-Ling Kao, Kuang-Po Hsueh, “Low Surface Traps Induced Noise ZrZnO Thin-Film Transistor Using Field-Plate Metal Technology”, Jpn. J. Appl. Phys. vol. 52, No.9, 094202, 2013. (impact factor=1.067, 81/128) 
  131. Prakash, A., Maikap, S., Chiu, H.-C., Tien, T.-C., Lai, C.-S., “Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface ”, Nanoscale Research Letters, vol. 8, issue 1, pp.419, 2013.
  132. H.C. Chiu, C.H. Chen, C.W. Yang, H.L. Kao, F.H. Huang, S.W. Peng, H.K. Lin, “Highly Thermally Stable In Situ SiNX Passivation AlGaN/GaN Enhancement-Mode High Electron Mobility Transistors Using TiW Refractory Gate Structure” J. Vac. Sci. Technol. B. vol. 31, issue.9, 051212, 2013.(impact factor=1.267, 105/243 ).
  133. Hsien-Chin Chiu, Chih-Wei Yang, Hsiang-Chun Wang, Fan-Hsiu Huang, Hsuan-Ling Kao and Feng-Tso Chien, “Characteristics of AlGaN/GaN HEMTs with Various Field-Plate and Gate-to-Drain Extensions” IEEE Trans. Electron Device, vol.60, no. 11, pp.3877-3882, 2013. (impact factor=2.318, 34/245)
  134. H.L.Kao, C. L. Cho, C. S. Yeh, H.C.Chiu, X. Dai, X. Y. Zhang, “An on-chip dual-band bandpass filter on a GaAs substrate” Electronics Lett, vol. 49, Issue 18, pp. 1157-1159, 2013.
  135. Zhixin Wang, Juin J. Liou, Kuan-Liang Cho, Hsien-Chin Chiu, “Development of Electrostatic Discharge Protection Solution in GaN Technology”, IEEE Electron Device Lett., vol. 34, no. 12, pp. 958 – 960, 2013 (impact factor=2.849, 23/245).
  136. P. Y. Ke, F. H. Huang, H. L. Kao, and H. C. Chiu, “A V-Band GaAs Low LO Power Driven Double Balanced Gilbert Mixer Based on Dual Meandering Baluns Design” Microwave and Optical Technology Letter, vol 56, issue 1, Jan, pp.60–64, 2014. (impact factor=0.585, 179/242)
  137. Hsien-Chin Chiu, Hsiang-Chun Wang, Chia-Hsuan Wu, Fan-Hsiu Huang, Hsuan-Ling Kao, Feng-Tso Chien, “An Investigation of Device Reliability for a Micro-machined AlGaN/GaN/Si High Electron Mobility Transistor Using Low Frequency Noise Measurement”, Microelectronic Engineering, vol. 114, no.2, pp. 117-120, 2014. (impact factor=1.338, 110/248 )
  138. Hsien-Chin Chiu, Hsiang-Chun Wang, Chih-Wei Yang, Fan-Hsiu Huang, Hsuan-Ling Kao, Heng-Kuang Lin, “A Novel Micromachined AlGaN/GaN Power HEMT with Air-Bridged Matrix Heat Redistribution Layer Design”, IEEE Electron Device Lett., vol. 35, no. 2, pp. 163 –165, 2014 (impact factor=3.023, 29/248).
  139. Hsien-Chin Chiu, Hsiang-Chun Wang, Yi-Cheng Luo, Fan-Hsiu Huang, Hsuan-Ling Kao, and Kuang-Po Hsueh, “Band Offsets and Electrical Stability Characterization of Zr-doped ZnO Thin-Film Transistors with a Gd2O3 Gate Insulator”, Microelectronic Engineering, vol. 114, no.5, pp. 517-520, 2014. (impact factor=1.338, 110/248 )
  140. Hsien-Chin Chiu, Chia-Hsuan Wu, Ji-Fan Chi, Feng-Tso Chien, “ Device Characteristics of AlGaN/GaN MIS-HEMTs with High-k HfxZr1-xO2(x=0.66, 0.47, 0.15) Insulator Layer” Microelectronics Reliability, vol. 54, no. 6, pp. 1282–1287, 2014. (impact factor=1.214, 124/248 )
  141. Hsien-Chin Chiu, Hsiang-Chun Wang, Chih-Wei Yang, Yue-Ming Hsin, Jen-Inn Chyi, Chang-Luen Wu, Chian-Sern Chang, “High Breakdown Voltage and Low Thermal Effect Micromachined AlGaN/GaN HEMTs” IEEE Trans. Dev. Mater. Reliab., vol. 14, no. 2, pp. 726-731, June. 2014. (impact factor=1.89, 69/249).
  142. H. L. Kao, C. S. Yeh, X. Y. Zhang, C. L. Cho, X. Dai, B. H. Wei, L .C. Chang, H. C. Chiu, “Inkjet printed series-fed two-dipole antenna comprising a balun filter on liquid crystal polymer substrate”, IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 4, no. 7, pp. 1228-1236, July. 2014.
  143. D. Jana, S. Maikap, A Prakash, Y. Y. Chen, H. C. Chiu, J. R. Yang, “Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories”, Nanoscale Research Letters, vol. 9, Issue 1, pp. 1-8, 2014
  144. H. L. Kao, C. L. Cho, L .C. Chang, X. Y. Zhang, B. H. Wei, X. Dai, H. C. Chiu, “Bending effect of an inkjet-printed series-fed two-dipole antenna on a liquid crystal polymer substrate”, IEEE Antennas and Wireless Propagation Letters, vol. 13, pp. 1172-1175, 2014.
  145. Hsien-Chin Chiu, Chia-Hsuan Wu, Ji-Fan Chi, J.-I. Chyi,and G.-Y. Lee, “N2O treatment Enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator” Microelectronics Reliability, vol. 55, no. 1, pp. 48–51, 2015. (impact factor=1.433, 107/249). 
  146. Hsien-Chin Chiu, Chia-Hsuan Wu, Che-Kai Lin, Feng-Tso Chien, “Investigation of impact ionization and flicker noise properties in indium aluminum arsenide/indium gallinum arsenide metamorphic high electron mobility transistors with various work function-gate metals” Materials Science in Semiconductor Processing, vol. 30, no. 2, pp. 41–47, 2015. (impact factor=1.955, 64/249). 
  147. Hsien-Chin Chiu, Chih-Wei Yang, Hsiang-Chun Wang, Hsuan-Ling Kao, Nai-Chuan Chen, Feng-Tso Chien, Ming-Chi Kan, “High Performance Micromachined GaN on Si HEMT with Backside Diamondlike-Carbon/Titanium Heat Dissipation Layer” Appl. Phys. Express, vol. 8,no.1, pp.011001,2015. (impact factor=2.365, 36/144)
  148. Hsien-Chin Chiu, Li-Yi Peng, Chih-Wei Yang, Hsiang-Chun Wang, Yue-Ming Hsin, Jen-Inn Chyi, “Analysis of the Back-Gate Effect in Normally-off p-GaN Gate High Electron Mobility Transistor” IEEE Trans. Electron Device, vol.62, no. 2, pp.507-511, 2015. (impact factor=2.472, 37/249)
  149. Hsien-Chin Chiu, Wen-Yu Lin, Chia-Yi Chou, Shih-Hsien Yang, Kai-Di Mai, Pei-chin Chiu, W. J. Hsueh, and Jen-Inn Chyi, “Device Stress Evaluation of InAs/AlSb HEMT on Silicon Substrate with Refractory Iridium Schottky Gate Metal” Microelectronic Engineering, vol. 138, no.4, pp. 17-20, 2015. (impact factor=1.197, 129/249 )
  150. Hsien-Chin Chiu, Wen-Yu Lin, W. J. Hsueh, Pei-Chin Chiu, Yue-Ming Hsin, and Jen-Inn Chyi, “The Device Characteristics of Ir- and Ti-Based Schottky Gates AlSb/InAs High Electron Mobility Transistors”, Microelectronics Reliability, vol. 55, no.4, pp. 890–893, 2015. (impact factor=1.433, 107/249).
  151. Min-Li Chou, Hsien-Chin Chiu and Fan-Hsiu Huang, “A Ka-Band VCO with Low Phase Noise and Wide Tuning Range Using a 90-nm Dual-Gate Device”, Microwave and Optical Technology Letter, vol 58, no3, Mar, pp.502–505, 2016. (impact factor=0.585, 179/242)
  152. Min-Li Chou, Hsien-Chin Chiu, Hsuan-Ling Kao and Fan-Hsiu Huang, “A 60 GHz CMOS Up-Conversion Double-Balanced Mixer with Wide IF Bandwidth” Microwave and Optical Technology Letter, vol 58, no3, Mar, pp.546–549, 2016. (impact factor=0.585, 179/242)
  153. Hsien-Chin Chiu, Li-Yi Peng, Hou-Yu Wang, Hsiang-Chun Wang, Hsuan-Ling Kao,G.-Y. Lee and Jen-Inn Chyi, “The Characterization of InAlN/AlN/GaN HEMTs using Silicon-on-Insulator (SOI) Substrate Technology”, J. Electrohem. Soc., vol. 163, no. 2, pp. H110-H114, 2016 (impact factor=3.266, 1/18 )
  154. Hsien-Chin Chiu, Li-Yi Peng, Hou-Yu Wang, Yuan-Hsiang Cheng, Hsiang-Chun Wang, Hsuan-Ling Kao, and Jen-Inn Chyi, “High Thermal Stability of GaN Schottky Diode with Diamond-like Carbon (DLC) Anode Design” J. Electrohem. Soc., vol. 163, no. 3, pp. H155-H158, 2016 (impact factor=3.266, 1/18 )
  155. Hsuan-ling Kao*, Cheng-Lin Cho, Chi-Lin Tseng, Hsien-Chin Chiu, and Yung-Yu Chen, " 67-80-GHz Double-Balanced Gilbert-Cell Mixer in 0.1 um GaAs pHEMT Technology," Electronics Letters, vol. 52, Issue 4, 2016, pp. 291-293. (SCI=0.93, 141/247)  
  156. Hsien-Chin Chiu, Ji-Fan Chi, Hsuan-Ling Kao, Chia-Yi Chu, Kuan-Liang Cho, Feng-Tso Chien, “The ESD Protection Characteristic and Low-Frequency Noise Analysis of GaN Schottky Diode with Fluorine-Based Plasma Treatment”, Microelectronics Reliability, vol. 59, no.4, pp. 44–48, 2016. (impact factor=1.202, 134/257).
  157. Hsien-Chin Chiu, Li-Yi Peng, Hou-Yu Wang, Hsiang-Chun Wang, Hsuan-Ling Kao, Feng-Tso Chien, Jia-Ching Lin, Kuo-Jen Chang, Yi-Cheng Cheng, “Temperature Dependency and Reliability of Through Substrate Via InAlN/GaN High Electron Mobility Transistors as Determined Using Low Frequency Noise Measurement”, Jpn. J. Appl. Phys. vol. 55, No.5, pp., 2016. (impact factor=1.122, 97/145 )
  158. Hsien-Chin Chiu, Li-Yi Peng, Chih-Wei Yang, Hsiang-Chun Wang, Kai-Di Mai, Hsuan-Ling Kao, Chien-Kai Tung, Tsung-Cheng Chang, Schang-jing Hon, Jia-Ching Lin, Kuo-Jen Chang, Yi-Cheng Cheng, “Normally-off Matrix Layout p-GaN GATE AlGaN/GaN Power HEMT with Through Substrate Via Process” J. Vac. Sci. Technol. B. vol. 34, issue.2 Mar/Apr, 021205, 2016.(impact factor =1.398, 116/257 ).
  159. Kuang-Po Hsueh, Feng-Tso Chien, Li-Yi Peng, Chih-Wei Yang, Hou-Yu Wang, Kai-Di Mai, and Hsien-Chin Chiu*, “Electrical Characterization of Gate Recessed AlGaN/GaN High Electron Mobility Transistors with p-GaN Passivation Layer” J. Vac. Sci. Technol. B. vol. 34, issue.5 Nov/Dec, 061204, 2016. (impact factor=1.573 143/260 ).
  160. Kuang-Po Hsueh, Hsien-Chin Chiu, Jinn-Kong Sheu and Yu-Hsiang Yeh, “Physical Properties of Al-doped MgZnO/AlGaN P-N Heterojunction Photodetectors”, Optical and Quantum Electronics, vol. 48, issue 11, pp.501 2016 (impact factor=1.29, 105/243 ).
  161. Cheng-Lin Cho, Hsuan-Ling Kao*, Li-Chun Chang, Yung-Hsien Wu, and Hsien-Chin Chiu, "Inkjet-Printed Multilayer Bandpass Filter Using Liquid Crystal Polymer System-on-Package Technology,” IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 6, Issue 4, April, pp. 622 -629, 2016. ( impact factor=1.236, 121/247)
  162. Cheng-Lin Cho, Hsuan-ling Kao*, Li-Chun Chang, Yung-Hsien Wu, Hsien-Chin Chiu, “Fully inkjet-printing of metal-polymer-metal multilayer on a flexible liquid crystal polymer substrate” Surface & Coatings Technology, vol.320, pp.568-573, 2017(impact factor=2.589, 4/19)
  163. Min-Li Chou, Hsien-Chin Chiu*, Hsuan-Ling Kao and Fan-Hsiu Huang, “A 60 GHz CMOS Frequency Tripler with Broadband Performance”, IEEE Microwave and Wireless Components Letters, vol. 27, no.3, pp.281-283, 2017. (impact factor=1.887, 117/260)
  164. Kuang-Po Hsueh, Li-Yi Peng, Yuan-Hsiang Cheng, , Hou-Yu Wang, Hsiang-Chun Wang, Hsuan-Ling Kao, and Hsien-Chin Chiu*, “Improved reverse recovery characteristics of low turn-on voltage AlGaN/GaN schottky barrier diodes with anode edge AlON spacers”, Journal of Alloys and Compounds, vol. 703, May, pp.204-209, 2017(impact factor=3.133, 4/75)
  165. P. Kumar, S. Maikap, S. Ginnaram, J.T. Qiu, D. Jana, S. Chakrabarti, S. Samanta, K. Singh, A. Roy, S. Jana, M. Dutta, Y. L. Chan, H. M. Cheng, R. Mahapatra, H. C. Chiu, and J. R.  Yang, “Cross-Point Resistive Switching Memory and Urea Sensing by Using Annealed GdOx Film in IrOx/GdOx/W Structure for 3 Biomedical Applications” J. Electrohem. Soc., vol. 164, no. 4, pp. B127-B135, 2017 (impact factor=3.266, 1/18)
  166. H.-L , Kao, C. L. Cho, P. C. Lee, C. L. Tseng, Y. Y. Chen, H. C. Chiu, “ A coupled-inductor dual-mode switched voltage-controlled oscillator using GaN-on-Si HEMT technology”, International Journal of Electronics, vol. 104, Issue 2, Pages 228-237, 2017(impact factor=0.729, 216/260 )
  167. Hsuan-Ling Kao, Hsien-Chin Chiu, “ A High Output Power and Low Phase Noise GaN HEMT VCO With Array of Switchable Inductors” International Journal of Circuit Theory and Applications. (impact factor=1.571, 144/260 )
  168. Kuang-Po Hsueh, Yuan-Hsiang Cheng, Hou-Yu Wang, Li-Yi Peng, Hsiang-Chun Wang, Hsien-Chin Chiu*, Chih-Wei Hu, Rong Xuan, “Effect of AlN spacer layer thickness on AlGaN/GaN/Si Schottky barrier diodes” Materials Science in Semiconductor Processing, vol. 66, no. 4, pp. 69–73, 2017. (impact factor =2.359, 53/256). 
  169. Hsien-Chin Chiu, Shang-Cyun Chen, Jiun-Wei Chiu, Bo-Hong Li, Hou-Yu Wang, Li-Yi Peng, Hsiang-Chun Wang, Kuang-Po Hsueh, “AlGaN/GaN Schottky barrier diodes on silicon substrates with various Fe doping concentrations in the buffer layers” Microelectronics Reliability, vol. 60, no.7, pp. 344–348, 2017. (impact factor=1.202, 134/257).
  170. Hsien-Chin Chiu, Shang-Cyun Chen, Jiun-Wei Chiu, Bo-Hong Li, Rong Xuan, Chih-Wei Hu, and Kuang-Po Hsueh,  “ Effect of Various Fe-doped AlGaN Buffer Layer of AlGaN/GaN HEMTs on Si Substrate” J. Vac. Sci. Technol. B. vol. 35, issue.4 Jul/Aug, 041205, 2017. (impact factor=1.398, 116/257 ).
  171. Feng-Tso Chien, Hsien-Chin Chiu, “ A Novel Thin-Film Transistor with Step Gate-overlapped Lightly Doped Drain and Raised Source/Drain Design”, Solid State Electronics, vol. 138, Issue 12, Pages 228-237, 2017. (impact factor=1.58, 139/260 ).
  172. Hsien-Chin Chiu, Li-Yi Peng, Hsiang-Chun Wang, Hsuan-Ling Kao, Hou-Yu Wang, Jen-Inn Chyi, “Improved Reverse Recovery Characteristics of InAlN/GaN Schottky Barrier Diode Using a SOI Substrate”, Semiconductor Science and Technology, vol. 32, Issue 10, Pages 105009, 2017. (impact factor=2.28, 100/262 ).
  173. Hsien-Chin Chiu, Hou-Yu Wang, Li-Yi Peng, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Wei Hu and Rong Xuan, “RF Performance of in-situ SiNx Gate Dielectric AlGaN/GaN MISHEMT on 6-inch Silicon-on-Insulator (SOI) Substrate” IEEE Trans. Electron Device, vol.64, no. 11, pp.2507-2511, 2017. (impact factor=2.62, 37/249)
  174. Hsien-Chin Chiu, Min-Li Chou, Chun-Hu Cheng, Hsuan-ling Kao, Cheng-Lin Cho, “Effect of Body Bias and Temperature on Low-Frequency Noise in 40-nm nMOSFETs”, Microelectronics Reliability, vol. 78, no.11, pp. 267–271, 2017. (impact factor=1.202, 134/257).
  175. Kuang-Po Hsueh, Hsiang-Chun Wang, Shang-Cyun Chen, Jiun-Wei Chiu, Bo-Hong Li, Feng-Tso Chien, Hsien-Chin Chiu*, “Effect of N2O/BCl3 Cyclical Recess Etching Technique Used Prior to Anode Metal Deposition in AlGaN/GaN Schottky Barrier Diodes”, ECS Journal of Solid State Science and Technology, vol. 6, no.10, N177-N181, 2017(impact factor=1.787, 68/148)
  176. Cheng-Lin Cho, Hsuan-Ling Kao*, Li-Chun Chang, Yung-Hsien Wu, and Hsien-Chin Chiu, "Fully Inkjet-Printing of Metal-Polymer-Metal Multilayer on a Flexible Liquid Crystal Polymer Substrate,” Surface and Coatings Technology, vol. 320, 2017, pp. 568-573. (impact factor=2.589, 4/18)
  177. Hsien-Chin Chiu, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Wei Hu and Rong Xuan, “High-Performance Normally-off p-GaN Gate HEMT with Composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N Barrier Layers Design” IEEE Journal of the Electron Devices Society, vol. 6, issue.1 pp. 201–206, 2018. (impact factor=3.14, 56/262)
  178. V.Sangwan , D. Kapoor , C. M. Tan , C. H. Lin, and H. C. Chiu, “ High-Frequency Electromagnetic Simulation and Optimization for GaN-HEMT Power Amplifier IC ” has been accepted by IEEE Transactions on Electromagnetic Compatibility.
  179. Xinke Liu, Hsien-Chin Chiu*, Hao-Yu Wang, Cong Hu, Hsiang-Chun Wang, Hsuan-Ling Kao, Feng-Tso Chien, “2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer using CMOS-Compatible Contact Materials” IEEE Journal of the Electron Devices Society, vol. 6, issue.1 pp. 825-829, 2018. (impact factor=2.696, 83/260)
  180. Cheng-Lin Cho, Hsuan-ling Kao, Yung-Hsien Wu, Hsien-Chin Chiu, and Li-Chun Chang, “ Fully Inkjet-Printed Dual-Mode Ring Bandpass Filter Using a Cross-Bridge Structure Embedded With a Metal-Insulator-Metal Capacitor”, IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 8, issue.10, pp. 1869-1875, 2018. (impact factor=1.66, 56/262)
  181. Kuang-Po Hsueh, Hou-Yu Wang, Hsiang-Chun Wang, Hsuan-Ling Kao, Feng-Tso Chien, Chih-Tien Chen, Kuo-Jen Chang, and Hsien-Chin Chiu*,“Reliability Studies on AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Through-substrate Via Technique and Backside Heat Sink Metal on Silicon-on-insulator Substrates”, ECS J. Solid State Sci. Technol. vol. 7, no.8, pp.Q142-Q147, 2018. (impact factor=1.808, 69/146)
  182. Hsien-Chin Chiu, Lung-I Chou, Hsiang-Chun Wang, Hsuan-Ling Kao, Chia-Han Lin, Ji-Xian Chen, Jen-Inn Chyi, Chih-Tien Chen, Kuo-Jen Chang, “High Performance InAlN/GaN/Si High Electron Mobility Transistor Using Microwave Ohmic Annealing Technique” ECS J. Solid State Sci. Technol. vol.7, issue 10, Q185-Q189, 2018. (impact factor=1.808, 69/146)
  183. Hsien-Chin Chiu, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsuan-Ling Kao, Feng-Tso Chien, Chih-Wei Hu and Rong Xuan, “High Uniformity Normally-off p-GaN Gate HEMT Using Self-terminated Digital Etching Technique” IEEE Trans. Electron Device, vol.65, no. 11, pp. 4820-4825, 2018. (impact factor=2.472, 37/249)
  184. Kuang-Po Hsueh, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsien-Chin Chiu*, Chih-Wei Hu, Rong Xuan, “Effect of the AlGaN/GaN Schottky barrier diodes combined with a dual anode metal and a p-GaN layer on reverse breakdown and turn-on voltage” Materials Science in Semiconductor Processing, vol. 90, no. 2, pp. 107–111, 2019. (impact factor=2.359, 53/256).
回上一頁