林瑞明 Ray-Ming Lin

Refereed paper

  1. M. S. Huang, L. B. Chang and Ray-Ming Lin, "A Study of the Direct-Connecting TJS-LED Fabrication Processes", Journal of CCIT vol. 20, No. 2, pp. 15-22 (1992).
  2. Yi-Jen Chan, Ming-Ta Yang, Jen-Inn Chyi, Jia-Lin Shieh and Ray-Ming Lin, "AlGaAs/GaAs Heterostructure Field-Effect Transistors (HFMTs) Grown by Molecular Beam Epitaxy", Proc. Natl. Sci. Counc. ROC (A), vol. 17, pp. 428-432 (1993).
  3. M.-T. Yang, Y.-J. Chan, C.-H. Chen, J.-I. Chyi, Ray-Ming Lin, and J.-L. Shieh, "The Characteristics of Pseudomorphic AlGaAs/InxGa1-xAs (0<x<0.25) Doped-channel Field-Effect Transistors", J. Appl. Phys., 76, pp. 2494-2498, (1994).
  4. J.-I. Chyi, J.-L. Shieh, Ray-Ming Lin, T.-E. Nee, and J.-W. Pan, "Molecular Beam Epitaxial Growth of InxAl1-xAs on GaAs", Appl. Phys. Lett., 65, pp. 699-701 (1994).
  5. J.-L. Shieh, J.-I. Chyi, R.-J. Lin, Ray-Ming Lin, and J.-W. Pan, "Band offsets of In0.3Ga0.7As/In0.29Al0.71As Hetrojunction Grown on GaAs Substrate", Electron Lett. 30, pp. 2172-2173, (1994).
  6. J.-I. Chyi, J.-L. Shieh, C.-S. Wu, Ray-Ming Lin, J.-W. Pan, and Y.-J. Chan, "Characteristics of In0.3Ga0.7As/In0.29Al0.71As Heterostructures Grown on GaAs Using InAlAs Buffers", Jpn J. Appl. Phys. Part 2, 33, pp. L1574-1576 (1994).
  7. H.-P. Hwang, J.-L. Shieh, Ray-Ming Lin, J.-I. Chyi, S.-L. Tu, C.-K. Peng, and S.-J. Yang, "Unstrained In0.3Ga0.7As/In0.29Al0.71As Resonantt Tunneling Diodes Grown on GaAs", Electron Lett., 30, pp. 826-828 (1994).
  8. R.-H. Yuang, J.-L. Shieh, Ray-Ming Lin, and J.-I. Chyi, "GaAs Metal-Semiconductor- Metal Photodetectors with AlGaAs Cap and Buffer Layers", J. Chinese Inst. Engineers, Vol. 18, No. 3, 445 (1995).
  9. J.-I. Chyi, J.-L. Shieh, R.-J. Lin, J.-W. Pan, and Ray-Ming Lin, "Schottky Barrier Heights of InxAl1-xAs (0<x<0.35) Epilayers on GaAs", J. Appl. Phys., 77, pp. 1813~1815 (1995).
  10. C. H. Kuan, Ray-Ming Lin, Shiang -Feng Tang, and Tai-Ping Sun, "Analysis of the dark current in the bulk of InAs diode detectors", J. Appl. Phys. 80, No 9, pp. 5454-5458 (1996).
  11. J. I. Chyi, J. L. Shieh, J. W. Pan and Ray Ming Lin, "Material properties of compositional graded InxGa1-xAs and InxAl1-xAs epilayers grown on GaAs substrates", J. Appl. Phys. 79 (11), pp. 8367-8370 (1996).
  12. Ray-Ming Lin, Shiang -Feng Tang, Si-Chen Lee , C. H. Kuan, Gin-Shiang Chen, Tai-Ping Sun and Jyh-Chiarng Wu, "Room Temperature Unpassivated InAs p-i-n Photodetectors Grown by Molecular Beam Epitaxy", IEEE Trans. Electron device, 44, No 2, pp. 209-213 (1997).
  13. Biing-Der Liu, Ray-Ming Lin, Si-Chen Lee and Tai Ping Sun, "InAs Room Temperature Infrared Photoconductive Detectors Grown by Molecular Beam Epitaxy", J. Vac. Sci. Technol. B, 15, No 2, pp. 321-324 (1997).
  14. Ray-Ming Lin and Si-Chen Lee, "Novel Method for Monitoring the Surface Roughness during Molecular Beam Epitaxy", Jpn J. Appl. Phys., 36, pp. 984-986 (1997).
  15. Yuan-Tung Dai, Yang-Fang Chen, Ray-Ming Lin, Si-Chen Lee and Hao-Hsiung Lin, "Photoluminescence and photothermal deflection spectroscopy of InAs quantum dot superlattice grown on GaAs by MBE" Jpn J. Appl. Phys., 36, Iss 6B, pp. L811-L814 (1997).
  16. Yuan-Tung Dai, J. C. Fan, Yang-Fang Chen, Ray-Ming Lin, Si-Chen Lee and Hao-Hsiung Lin, "Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large Thicknesses", J. Appl. Phys., 82, Iss 9, pp. 4489-4492 (1997).
  17. Ming-Jer Jeng, Hung-Thung Wang, Liann-Be Chang, Yi-Chang Cheng, Cheng-Min Lee, and Ray-Ming Lin, "Barrier Height Enhancement of Ni/n-type InP Schottky Contacts Using a Thin Praseodymium Interlayer", Jpn. J. Appl. Phys, vol.38, pp.1382-1384 (1999).
  18. Ray-Ming Lin, Shiang -Feng Tang, and C. H. Kuan, "Study of current leakage in InAs p-i-n photodectors", J. Vac. Sci. Technol. B, vol.18(6), pp. 2624-2626 (2000).
  19. Ming-Jer Jeng, Hung-Thung Wang, Liann-Be Chang, and Ray-Ming Lin, "Surface Passivation Using P2S5/(NH4)2Sx and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes", Jpn. J. Appl. Phys, 40, Part 1, No. 2A, pp.562-564 (2001).
  20. Ray-Ming Lin, Shiang -Feng Tang, Si-Chen Lee and C. H. Kuan, "Improvement of current leakage in the InAs photodetector by Molecular Beam Epitaxy", J. Crystal Growth, 227-228, pp. 167-171 (2001).
  21. Ray-Ming Lin, Si-Chen Lee, Hao-Hsiung Lin, Yuan-Tung Dai and Yang-Fang Chen, "Blueshift of Photoluminescence Peak in ten periods InAs Quantum Dots Superlattice", J. Crystal Growth, 227-228, pp. 1034-1038 (2001).
  22. Ray-Ming Lin, Tzer-En Nee, Mei-Ching Tsai, Yuan-Hao Chang, Ping-Lin Fan, and Rong-Seng Chang, "Thickness Dependent Renormalization of Strain Effects on Self-Organized InAs Quantum Dots Grown on GaAs”, J. Vac. Sci. Technol. A 20(3), pp. 1125-1127 (2002).
  23. Tzer-En Nee, Ray-Ming Lin, Li-Zen Hsieh and Liann-Be Chang , "Growth and Coalescence Evolution of InAs on GaAs by Molecular Beam Epitaxy ", J. Vac. Sci. Technol. A , 20(3), pp. 1128-1131 (2002).
  24. Tzer-En Nee, Kuo-Tai Chien, Yi-Lun Chou, Li-Chang Chou, Chung-Han Lin, Ray-Ming Lin, Bor-Ren Fang and Shi-Shya Chang, "Effect of Current Spreading on Luminescence Improvement in Selectively Oxidized AlGaInP Light-Emitting Diodes", J. Vac. Sci. Technol. B , 21(3), pp. 1157-1160 (2003).
  25. Ping-Yu Kuei, Li-Zen Hsieh, Liann-Be Chang, Ming-Jer Jeng, and Ray-Ming Lin, "On the Reflectivity Spectrum of Implanted AlGaAs Distributed Bragg Reflector", Jpn. J. Appl. Phys, 42, Part 1, No. 10, October, pp.562-564 (2003).
  26. Tzer-En Nee, Chao-Ching Cheng and Ray-Ming Lin, "Phonon-Assisted Auger Recombination Processes in InGaAs/GaAs Single-Quantum-Well Lasers", Jpn. J. Appl. Phys, 43, No. 3, pp.890-893 (2004).
  27. L. B. Chang, P. Y. Kuei, L. Z. Hsieh, L. Y. Chang, and Ray-Ming Lin, "Study of AlGaInP multiquantum-well/double heterostructure light-emitting diodes with In-added GaP window layer regrown by antimony-based liquid phase epitaxy", J. Vac. Sci. Technol. A , 22 , pp.807-810 (2004).
  28. Tai-Ping Sun, Shih-Yen Lin, San-Te Yang, Cheng-Der Chiang, Ya-Tung Cherng, Hui-Tang Shen, Tzer-En Nee, Ray-Ming Lin, Min-Yu Hsu, "Surface Morphology and Photoluminescence of InAs Quantum Dots Grown on [110]-Oriented Streaked Islands Under Ultra-low V/III Ratio", IEEE Trans. On NANOTECHNOLOGY, 3, No. 2, June (2004).
  29. Ray-Ming Lin, Chao-Ching Cheng, Hui-Tang Shen, and Tzer-En Nee, "Study of lateral-carrier transport in InAs quantum-dot heterostructures by optical spectroscopy", J. Vac. Sci. Technol. A , 22(3), pp.891-893 (2004).
  30. Lung-Chien Chen, Hsin-Nan Chen, and, Ray-Ming Lin, “Growth and characteristics of GaNxP1-x alloys by magnetron reactive sputtering on GaN” ", J. Crystal Growth (2005).
  31. Tzer-En Nee, Ya-Fen Wu, and Ray-Ming Lin, "Effect of carrier hopping and relaxing on photoluminescence line shape in self-organized InAs quantum dot heterostructures", J. Vac. Sci. Technol. B , May/June (2005).
  32. Ray-Ming Lin, Chung-Han Lin, Jen-Cheng Wang, Tzer-En Nee, Bor-Ren Fang, and Ruey-Yu Wang, “Study of Electroluminescence Quenching in the InGaN/GaN Blue Diode with Multi-Quantum Barrier Structure” J. Crystal Growth, 278, pp.421-425 (2005).
  33. Tzer-En Nee, Jen-Cheng Wang, Chung-Han Lin, Ray-Ming Lin, Bor-Ren Fang and Ruey-Yu Wang, "Cross sections for the investigation of the electroluminescence excitation of InGaN/GaN quantum wells in blue light-emitting diodes with multiquantum barriers", J. Vac. Sci. Technol. B , pp.966-969 May/June (2005).
  34. Tzer-En Nee, Jen-Cheng Wang, Hui-Tang Shen, Chao-Ching Cheng, Ray-Ming Lin*, "Optical investigation of the interdot carrier transfer process in InAs/GaAs quantum-dot heterosystems", J. Vac. Sci. Technol. B , pp.34-37 January/February (2006).
  35. Tzer-En Nee, Hui-Tang Shen, Jen-Cheng Wang, and Ray-Ming Lin*, “Characterization for the Berthelot-type behaviors of InGnN/GaN semiconductor heterosystems”, J. Crystal Growth, pp.287, 468-471 (January 2006).
  36. Yen-Lin Lai, Chuan-Pu Liu, Yung-Hsiang Lin, Tao-Hung Hsueh, Ray-Ming Lin, Dong-Yuan Lyu, Zhao-Xiang Peng and Tai-Yuan Lin, "Origins of efficient green light emission in phase-separated InGaN quantum wells", Nanotechnology, 17, pp.3734-3739 (2006).
  37. Ray-Ming Lin*, Jen-Chih Li, Yi-Lun Chou, and Meng-Chyi Wu, "Using the Taguchi Method to Improve the Brightness of AlGaInP MQW LED by Wet Oxidation“, IEEE PHOTONICS TECHNOLOGY LETTERS, Vol. 18, No. 15, AUGUST 1, PP. 1642-1644, (2006).
  38. Yen-Lin Lai, Chuan-Pu Liu, Yung-Hsiang Lin, Ray-Ming Lin, Dong-Yuan Lyu, Zhao-Xiang Peng and Tai-Yuan Lin, “Effects of the material polarity on the green emission properties of InGaN/GaN multiple quantum wells”, APPLIED PHYSICS LETTERS 89, pp.151906, (2006).
  39. Ray-Ming Lin*, Jen-Chih Li, Yi-Lun Chou, Kuo-Hsing Chen, Yung-Hsiang Lin, Yuan-Chieh Lu, Meng-Chyi Wu, Hung Hung and Wei-Chi Lai, “Improving the luminescence of InGaN/GaN blue LEDs through selective ring-region activation of the Mg-doped GaN layer”, IEEE PHOTONICS TECHNOLOGY LETTERS, Vol. 19, No. 2, JUNE 15, PP. 928-930 (2007).
  40. H. Hung, C. H. Chen, S. J. Chang, K. Kuan, R. M. Lin, C. H. Liu, “Kinetics of persistent photoconductivity in InGaN epitaxial films grown by MOCVD” J. Crystal Growth, 298, pp.246-250 (2007).
  41. H. Hung, S. J. Chang,, Y. C. Lin, M. H. Wu, H. Kuan and R. M. Lin, “AlGaN MSM Photodetectors with recess etched LT-AlGaN cap layer”, IET Optoelectronics ,Vol.1, pp147-149 (2007).
  42. S. J. Chang, H. Hung, Y. C. Lin, H. Kuan, R. M. Lin, C. H. Chen, and M. H. Wu, “AlGaN Ultraviolet Metal-Semiconductor-Metal Photodetectors with Low-Temperature-Grown Cap Layers”, Jpn. J. Appl. Phys., Vol. 46, No. 4B, pp. 2471-2473, April (2007).
  43. Chia-Lung Tsai, Yi-Lun Chou, Ray-Ming Lin, Feng-Ming Lee,  Meng-Chyi Wu, Sun-Chien Ko, “An alternative method to fabricate the planar-type resonant-cavity light-emitting diodes by using silicon oxide for short-reach communications”, Materials Science in Semiconductor Processing, Vol. 10, n 6, p. 235-240, December (2007).
  44. Ray-Ming Lin*, Yuan-Chieh Lu, Yi-Lun Chou, Guo-Hsing Chen, Yung-Hsiang Lin, and Meng-Chyi Wu, “Enhanced Characteristics of blue InGaN/GaN Light-Emitting Diodes by using selective activation to modulate the lateral current spreading length ”, APPLIED PHYSICS LETTERS, Vol. 92, July 1, p. 261105 (2008).
  45. Hsien-Chin Chiu, Chih-Wei Yang, Yung-Hsiang Lin, Ray-Ming Lin, Liann-Be Chang, Kuo-Yang Horng, “Device Characteristics of AlGaN/GaN MOS-HEMTs Using High-k Praseodymium Oxide Layer” , IEEE ELECTRON DEVICE, Vol. 55, No. 11, November, p. 3305 (2008).
  46. Xinhe Zheng, Ray-Hua Horng, Dong-Sing Wuu, Mu-Tao Chu, Wen-Yih Liao, Ming-Hsien Wu, Ray-Ming Lin, and Yuan-Chieh Lu, “High-quality InGaN/GaN heterojunctions and their photovoltaic effects”, Appl. Phys. Lett. Vol.93, 29 December, 261108 (2008).
  47. Ray-Ming Lin*, Yi-Lun Chou,Wan-Ching Tseng, Chia-Lung Tsai, Jen-Chih Li, and Meng-Chyi Wu, “Thermal Stability for Reflectance and Specific Contact Resistance of Ni/Ag-Based Contacts on p-Type GaN”, Electrochemical and Solid-State Letters, 12 (9), Jun, H315  (2009).
  48. Ray-Hua Horng, Shih-Ting Lin, Yu-Li Tsai, Mu-Tao Chu, Wen-Yih Liao, Ming-Hsien Wu, Ray-Ming Lin, and Yuan-Chieh Lu,” Improved Conversion Efficiency of GaN/InGaN Thin-Film Solar Cells”, IEEE ELECTRON DEVICE LETTERS, 30 (7), JULY (2009).
  49. Ray-Ming Lin*, Yuan-Chieh Lu, Sheng-Fu Yu, YewChung Sermon Wu, Chung-Hao Chiang, Wen-Ching Hsu, and Shoou-Jinn Chang, “Enhanced Extraction and Efficiency of Blue Light Emitting Diodes Prepared Using Two-Step-Etched Patterned Sapphire Substrates”, Journal of the Electrochemical Society, 156 (11), Oct, p.874-H876 (2009).
  50. Hsien-Chin Chiu, Chao-Wei Lin, Chao-Hung Chen, Chih-Wei Yang, Che-Kai Lin, Jeffrey S Fu, Liann-Be Chang, Ray-Ming Lin, Kuang-Po Hsueh “Low hysteresis dispersion La2O3 AlGaN/GaN MOS-HEMTs”, Journal of the Electrochemical Society, 157 (2), p H160-H164 (2010).
  51. Ray-Ming Lin*, Yung-Hsiang Lin, Chung-Hao Chiang, Mu-Jen Lai, Yi-Lun Chou, Yuan-Chieh Lu, Shou-Yi Kuo, Bor-Ren Fang, and Meng-Chyi Wu, “Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs”, Microelectronics Reliability, 50, p. 679–682 (2010).
  52. Ming-Jer Jeng, Te-Wen Su, Yu-Lin Lee, Yuan-Hsiao Chang, Liann-Be Chang, Ray-Ming Lin, Jhong-Hao Jiang, and Yuan-Chieh Lu, “Effect of Silicon Doping on Performance of 30-Pair InxGa1-xN/GaN Quantum Well Solar Cells”, Jpn. J. Appl. Phys., Vol. 49, pp. 052302, May (2010).
  53. Mu-Jen Lai, Liann-Be Chang, Tzu-Tao Yuan, and Ray-Ming Lin, “Improvement of crystal quality of AlN grown on sapphire substrate by MOCVD with increasing hydrogen flow rate”, Crystal Research and Technology, 45,No. 7, 703-706 (2010).
  54. Mu-Jen Lai, Liann-Be Chang, Ray-Ming Lin*, and Chou-Shuang Huang, “Improvement of External Quantum Efficiency in InGaN-Based Double-Heterostructure Light-Emitting Diodes”, Applied Physics Express, 3, 072102 (2010).
  55. Ray-Ming Lin, Mu-Jen Lai, Liann-Be Chang, and Chou-Hsiung Huang, “Effect of an asymmetry AlGaN barrier on efficiency droop in wide-well InGaN double-heterostructure light-emitting diodes”, Appl. Phys. Lett. Vol.97(18), 181108, November (2010).
  56. Liann-Be Chang, Mu-Jen Lai, Ray-Ming Lin*, and Chou-Hsiung Huang, “Effect of electron leakage on efficiency droop in wide-well InGaN-based light-emitting diodes”, Applied Physics Express, 4, 012106 (2011).
  57. Yi-Lun Chou, Ray-Ming Lin, Min-Hung Tung, Chia-Lung Tsai, Jen-Chih Li,  I.-Chun Kuo, Meng-Chyi Wu, ”Improvement of surface emission for GaN-based light-emitting diodes with a metal-via-hole structure embedded in a reflector”, IEEE Photonics Technology Letters, v 23, n 7, p 393-395, (2011).
  58. Liann Be Chang, Atanu Das, Ray Ming Lin*, Siddheswar Maikap, Ming Jer Jeng and Shu Tsun Chou, “An Observation of Charge Trapping Phenomena in GaN/AlGaN/Gd2O3/Ni-Au Structure”Appl. Phys. Lett. Vol.98(1), 222106 June2, (2011).

Journal articles & book chapters

  1. J-I Chyi, J-L Shieh, R-M Lin, T-E Nee, and J-W Pan, "Molecular-beam epitaxial growth of InxAl1–xAs on GaAs", Appl. Phys. Lett., 67, 2046-2048, (1995).
  2. R.-M. Lin, T.-E. Nee, M.-C. Tsai, Y.-H. Chang, P.-L. Fan, and R.-S. Chang, "Thickness Dependent Renormalization of Strain Effects on Self-Organized InAs Quantum Dots Grown on GaAs", J. Vac. Sci. Technol.  20, 1125 (2002).
  3. T.-E. Nee, R.-M. Lin, L.-Z. Hsieh, and L.-B. Chang, "Growth and Coalescence Evolution of InAs on GaAs by Molecular Beam Epitaxy", J. Vac. Sci. Technol. A 20, 1128 (2002).
  4. T.-E. Nee, K.-T. Chien, Y.-L Chou, L.-C. Chou, C.-H. Lin, R.-M. Lin, B.-R. Fang, and S.-S. Chang, "Effect of Current Spreading on Luminescence Emission in Selectively Oxidized AlGaInP Light-Emitting Diodes", J. Vac. Sci. Technol. B 21, pp. 1157-1160 (2003).
  5. T.-E. Nee, C.-C. Cheng, and R.-M. Lin. "Phonon-Assisted Auger Recombination Process in the InGaAs/GaAs Single Quantum Well Lasers", Jpn. J. Appl. Phys. 43, pp. 890-893, (2004).
  6. R.-M. Lin, C.-C. Cheng, H.-T. Shen, and T.-E. Nee, "Study of Lateral-Carrier Transport in InAs Quantum-Dot Heterostructures by Optical Spectroscopy", J. Vac. Sci. Technol. A 22, 891 (2004).
  7. Shiang Feng Tang, Shih Yen Lin, San Te Yang, Cheng Der Chiang, Ya Tung Cherng, Hui Tang Shen, Tzer-En Nee, R.-M. Lin, and Min Yu Hsu, "Surface Morphology and Photoluminescence of InAs Quantum Dots Grown on -Oriented Streaked Islands Under Ultra-low V/III Ratio", IEEE Trans. on Nanotechnology 3, 275 (2004).
  8. Y.-F. Wu, H.-T. Shen, Y.-H. Lin, C.-C. Cheng, R.-M. Lin, T.-E. Nee, and N.-T. Yeh, "Intersublevel Relaxation Dependence of Carrier Hopping in Self-Organized InAs Quantum Dot Heterostructures", Solid State Phenomena 99-100, pp. 41-48 (2004).
  9. Ray-Ming Lin, Chung-Han Lin, Jen-Cheng Wang, Tzer-En Nee, Nie-Chuan Chen, Chuan-Feng Shih, Bor-Ren Fang, and Ruey-Yu Wang, "Study of Electroluminescence Quenching in the InGaN/GaN Blue Diode with Multi-Quantum Barrier Structure", J. Cryst. Growth. 278, pp. 421-425 (2005).
  10. Tzer-En Nee, Ya-Fen Wu, and Ray-Ming Lin, "Effect of carrier hopping and relaxing on photoluminescence line shape in self-organized InAs quantum dot heterostructures", J. Vac. Sci. Technol. B 23, pp. 954-958 (2005).
  11. Tzer-En Nee, Jen-Cheng Wang, Chung-Han Lin, Ray-Ming Lin, Ching-An Huang, Bor-Ren Fang, and Ruey-Yu Wang, "Cross sections for the investigation of the electroluminescence excitation of InGaN/GaN quantum wells in blue light-emitting diodes with multiquantum barriers", J. Vac. Sci. Technol. B 23, pp. 966-969 (2005).
  12. Tzer-En Nee, Jen-Cheng Wang, Hui-Tang Shen, Chao-Ching Cheng, and Ray-Ming Lin, "Optical investigation of the interdot carrier transfer process in InAs/GaAs quantum-dot heterosystems", J. Vac. Sci. Technol. B 24, pp. 34-37 (2006).
  13. Tzer-En Nee, Hui-Tang Shen, Jen-Cheng Wang, and Ray-Ming Lin, "Characterization of Berthelot-type behaviors of InGaN/GaN semiconductor heterosystems, J. Cryst. Growth 287, pp. 468-471 (2006).

Conference & proceeding papers

  1. Ray-Ming Lin, T.-E. Nee, Yuan-Hao Chang, Yuan-Tung Dai, Yang-Fang Chen, and Xing Jian Guo, "Study of strain relaxation in self-organized InAs quantum dots", 21st International Conference on Defects in Semiconductors, Giessen, Germany, July 16-20 (2001).
  2. T.-E. Nee, R.-M. Lin, M.-C. Tsai, Y.-H. Chang, P.-L. Fan, and R.-S. Chang, "Thickness Dependent Renormalization of Strain Effects on Self-Organized InAs Quantum Dots Grown on GaAs", 10th Canadian Semiconductor Technology Conference Ottawa, Canada, August 13-17 (2001).
  3. R.-M. Lin, T.-E. Nee, S.-C. Lee, and H.-H. Lin, "Growth and Coalescence Evolution of InAs on GaAs by Molecular Beam Epitaxy", 10th Canadian Semiconductor Technology Conference Ottawa, Canada, August 13-17 (2001).
  4. K.-T. Chien, L.-C. Chou, R.-M. Lin, and T.-E. Nee, "Effect of Current Spreading on Luminescence Emission in Selectively Oxidized AlGaInP Light-Emitting Diodes", 11th International Conference on Metal-Organic Vapour Phase Epitaxy, Berlin, German, May (2002).
  5. C.-C. Cheng, C.-E. Huang, T.-F. Liu, R.-M. Lin, and T.-E. Nee, "Observation of Auger Recombination Processes in the InGaAs/GaAs Single Quantum Well Lasers", 4th International Conference on Low Dimensional Structures and Devices, Fortaleza - Ceará, Brazil, 8-13 December (2002).
  6. C.-C. Cheng, C.-E. Huang, T.-F. Liu, R.-M. Lin, T.-E. Nee, and Nien-Tze Yeh, "Observations of Hot-Hole Processes in InGaAs/GaAs Single-Quantum-Well Lasers", Intl. Electron Devices and Materials Symposium (IEDMS), Taipei, Taiwan, R.O.C. (2002).
  7. Chao-Ching Cheng, Hui-Tang Shen, Ray-Ming Lin, Tzer-En Nee, Ya-Fen Wu, Tung-Po Hsieh, and Nien-Tze Yeh, “Lateral Hot-Carrier Transport in InAs Quantum Dot Heterostructures by Optical Spectroscopy”, Eleventh Canadian Semiconductor Technology Conference, Ottawa, Canada, Aug. 18-22 (2003).
  8. Jen-Chih Li, Jui-Hsin Tsai, Ray-Ming Lin, Tzer-En Nee, Si-Chen Lee, and Hao-Hsiung Lin “Study of Growth and Thermal Treatment in InAs Quantum Dots”, Eleventh Canadian Semiconductor Technology Conference, Ottawa, Canada, Aug. 18-22 (2003).
  9. Hui-Tang Shen, Ya-Fen Wu, Yung-Hsiang Lin, Chao-Ching Cheng, Ray-Ming Lin, Tzer-En Nee, and Nien-Tze Yeh, "Intersublevel Relaxation Dependence of Carrier Hopping in self-organized InAs Quantum Dot Heterostructures", European Materials Research Society, FALL MEETING, Warsaw, Poland, September 15-19 (2003).
  10. Hui-Tang Shen, Jen-Cheng Wang, Yung-Hsiang Lin, Chao-Ching Cheng, Ray-Ming Lin, Tzer-En Nee, and Nien-Tze Yeh, "Thermally enhanced lateral carrier transfer characteristics in InAs/GaAs quantum dot heterosystem", European Materials Research Society, FALL MEETING, Warsaw, Poland, September 15- 19 (2003).
  11. Yuan-Chieh Lu, Yung-Hsiang Lin, Ray-Ming Lin, Tzer-En Nee, and Nien-Tze Yeh, "Strain effects on polarization-dependent photoluminescence in InAs/GaAs quantum dot heterostructure", the Seventh International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, Nara, Japan (2003).
  12. Y.-H. Lin, Y.-C. Lu, C.-C. Cheng, A.-P. Wang, R.-M. Lin, T.-E. Nee, N. T. Yeh, and C. H. Wu, "Photoluminescence Polarization Anisotropy of Multilayer InAs/GaAs Heterostructures with Quantum Dots", 2nd International Conference on Materials for Advanced Technologies & IUMRS - International Conference in Asia, Singapore (2003).
  13. S. F. Tang, S. Y. Lin, S. T. Yang, C. D. Chiang, Y. T. Cherng, H. T. Shen, T.-E. Nee, R.-M Lin, and M. Y. Hsu, "Surface morphology and photoluminescence of InAs quantum dots grown on -oriented streaked-islands under ultra low V/III ratio", Proceedings of SPIE - The International Society for Optical Engineering, 5118, 101 (2003).
  14. Ya-Fen Wu, Hui-Tang Shen, Ray-Min Lin, Tzer-En Nee, Nien-Tze Yeh, Tung-Po Hsieh, and Jiunn-Chyi Lee, "The thermal model for carrier hopping and retrapping in self-organized InAs quantum dot heterostructure", 27th International Conference on the Physics of Semiconductors, Flagstaff, Arizona, U. S. A., July 26-30 (2004).
  15. T.-E. Nee, Y.-C. Lu, Y.-H. Lin, and R.-M. Lin, "Substrate Effects on Optical Anisotropy of InAs/GaAs Quantum Dot Heterostructure", 14th International Conference on Crystal Growth, Alpes Congrès, Grenoble France, August 9-13 (2004).
  16. Ray-Ming Lin, Chung-Han Lin, Jen-Cheng Wang, Tzer-En Nee, Nie-Chuan Chen, Chuan-Feng Shih, Bor-Ren Fang, and Ruey-Yu Wang, "Study of Electroluminescence Quenching in the InGaN/GaN Blue Diode with Multi-Quantum Barrier Structure", 13th International Conference on Molecular Beam Epitaxy, Edinburgh, Scotland, August 22-27 (2004).
  17. Ray-Ming Lin, Jen-Chih Li, Cheng-Han Lu, Tzer-En Nee, Bor-Ren Fang, and Ruey-Yu Wang, "Study of Wet-oxidation to Trade-off the AlGaInP LEDs Brightness Performance and Forward Voltage", 13th International Conference on Molecular Beam Epitaxy, Edinburgh, Scotland, August 22-27 (2004).
  18. Jen-Cheng Wang, Ray-Ming Lin, Tzer-En Nee, and Nie-Chuan Chen, "Characterization of the Carrier Confinement for InGaN/GaN Light Emitting Diode with Multiquantum Barriers", the 2004 MRS Fall Meeting, Boston, Massachusetts, U.S.A., November 29-December 3 (2004).
  19. Yao-Hui Tsai, Jen-Cheng, Tzer-En Nee, and Ray-Ming Lin, "Characterization of temperature effect on misoriented off substrates in InAs/GaAs quantum-dot heterostructures", Optics and Photonics Taiwan’04, Tao-Tuan, Taiwan, Republic of China, December 18-19 (2004).
  20. Jen-Cheng Wang, Chung-Han Lin, Ray-Ming Lin, and Tzer-En Nee, "Optical properties and carrier confinement of blue InGaN/GaN multiple quantum well light-emitting diode with multiquantum barriers", Optics and Photonics Taiwan’04, Tao-Tuan, Taiwan, Republic of China, December 18-19 (2004).
  21. Jen-Cheng Wang, Hui-Tang Shen, Ray-Ming Lin, and Tzer-En Nee, "Characterization of interdot carrier transport dependent on photoexcition density in InAs/GaAs heterosystems", Optics and Photonics Taiwan’04, Tao-Tuan, Taiwan, Republic of China, December 18-19 (2004).
  22. Jen-Cheng Wang, Tzer-En Nee, Ray-Ming Lin, and Nie-Chuan Chen, "Improvement of carrier confinement in blue light emitting diode with InGaN/GaN multiquantum barriers", the International Symposium on Integrated Optoelectronic Devices 2005 at SPIE Photonics West, San Jose, CA, U.S.A., January 22-27 (2005).
  23. Ray-Ming Lin, Jen-Cheng Wang, Hui-Tang Shen, Chung-Han Lin, Jen-Chih Li, Yung-Hsiang Lin, Yuan-Chieh Lu, Tzer-En Nee, Bor-Ren Fang, and Ruey-Yu Wang, "Abnormal optical properties of blue InGaN/GaN multiple quantum well light-emitting diode with multiquantum barriers", The 10th OptoElectronics and Communications Conference, Seoul, Korea, July 4-8 (2005).
  24. Hui-Tang Shen, Tzer-En Nee, Jen-Cheng Wang, Yung-Hsiang Lin, Jen-Chih Li, Ya-Fen Wu, Yuan-Chieh Lu, Ray-Ming Lin, Bor-Ren Fang, Ruey-Yu Wang, and Chen-Kai Kao, "Characterization for the Berthelot-type behaviors of InGaN/GaN semiconductor heterosystems", 16th American Conference on Crystal Growth and Epitaxy, Big Sky Resort, Montana, U.S.A., July 10-15 (2005).
  25. Tzer-En Nee, Hui-Tang Shen, Jen-Cheng Wang, Kuo-Hsing Chen, Jen-Chih Li, Yuan-Chieh Lu, Ya-Fen Wu, Yung-Hsiang Lin, Chung-Han Lin, Ray-Ming Lin, Bor-Ren Fang, Ruey-Yu Wang, and Chen-Kai Kao, "Effect of high temperature on the optical properties of InGaN/GaN blue light-emitting diodes with multiquantum barriers", 16th American Conference on Crystal Growth and Epitaxy, Big Sky Resort, Montana, U.S.A., July 10-15 (2005).
  26. Jen-Cheng Wang, Ya-Fen Wu, Chung-Han Lin, Jen-Chih Li, Hui-Tang Shen, Yuan-Chieh Lu, Yung-Hsiang Lin, Ray-Ming Lin, Tzer-En Nee, and Ruey-Yu Wang, "Characterization of the Carrier Transports in InGaN/GaN Blue Light-emitting Diodes with Multiquantum Barriers", Twelfth Canadian Semiconductor Technology Conference, Ottawa, Canada, August 16-19 (2005).
  27. Jiunn-Chyi Lee, Ya-Fen Wu, Chao-Ching Cheng, Hui-Tang Shen, Jen-Cheng Wang, Ray-Ming Lin, and Tzer-En Nee, "Temperature Dependence of Carrier Dynamics in InAs/GaAs Quantum Dot Heterostructures", Twelfth Canadian Semiconductor Technology Conference, Ottawa, Canada, August 16-19 (2005).
  28. Yuan-Chieh Lu, An-Pin Wang, Kuo-Hsing Chen, Jen-Cheng Wang, Jen-Chih Li, Hui-Tang Shen, Yung-Hsiang Lin, Hsien-Chin Chiu, Ray-Ming Lin, and Tzer-En Nee, "Wet-Etched Morphology Effects of Indium-Tin-Oxide on the Characteristics of InGaN-Based Light Emitting Diodes", The 2nd International Symposium on Point Defect and Nonstoichiometry: ISPN2005, Kaohsiung, Taiwan, October 4-6 (2005).
  29. Yung-Hsiang Lin, Jen-Chih Li, Yuan-Chieh Lu, Hui-Tang Shen, Chieh-Li Yang, Ray-Ming Lin, Tzer-En Nee, Bor-Ren Fang, and Ruey-Yu Wang, "Optical characterization of GaN grown on patterned sapphire substrate", The 2nd International Symposium on Point Defect and Nonstoichiometry: ISPN2005, Kaohsiung, Taiwan, October 4-6 (2005).
  30. Jen-Cheng Wang, Chung-Han Lin, Ray-Ming Lin, Tzer-En Nee, Bor-Ren Fang, and Ruey-Yu Wang, "Characterization of the Carrier Confinement for InGaN/GaN Light Emitting Diode With Multiquantum Barriers", in GaN, AlN, InN and Their Alloys, edited by Christian Wetzel, Bernard Gil, Masaaki Kuzuhara, and Michael Manfra (Mater. Res. Soc. Symp. Proc. 831, Warrendale, PA , 2005), E3.27. (EI)
  31. Ray-Ming Lin, Jen-Cheng Wang, Chung-Han Lin, and Tzer-En Nee, "Improvement of carrier confinement in blue light emitting diode with InGaN/GaN multiquantum barriers", Proc. SPIE Int. Soc. Opt. Eng. 5722, pp. 439-445 (2005). (EI)
  32. Ray-Ming Lin, Chung-Han Lin, Jen-Cheng Wang, and Tzer-En Nee, "Characterization of the carrier transports in InGaN/GaN blue light-emitting diodes with multiquantum barriers", Optics and Photonics Taiwan’05, Tai-Nan, Taiwan, Republic of China, December 9-10 (2005).
  33. Tzer-En Nee, Jen-Cheng Wang, and Ray-Ming Lin, "Effect of high temperature on the optical properties of InGaN/GaN blue light-emitting diodes with multiquantum barriers", Optics and Photonics Taiwan’05, Tai-Nan, Taiwan, Republic of China, December 9-10 (2005).
  34. Ray-Ming Lin, Hui-Tang Shen, Jen-Cheng Wang, and Tzer-En Nee, "Characterization of Berthelot-type behaviors of InGaN/GaN semiconductor heterosystems", Optics and Photonics Taiwan’05, Tai-Nan, Taiwan, Republic of China, December 9-10 (2005).
  35. Tzer-En Nee, Hui-Tang Shen, Chao-Ching Cheng, Jen-Cheng Wang, and Ray-Ming Lin, "Optical investigation of the interdot carrier transfer process in InAs/GaAs quantum-dot heterosystems", Optics and Photonics Taiwan’05, Tai-Nan, Taiwan, Republic of China, December 9-10 (2005).
  36. Jen-Cheng Wang, Hui-Tang Shen, Ray-Ming Lin, and Tzer-En Nee, "Excitation cross section of InGaN/GaN quantum wells in blue light-emitting diodes with multiquantum barriers", NanoSingapore 2006: IEEE Conference on Emerging Technologies – Nanoelectronics, Singapore, January 10-13 (2006).
  37. Hui-Tang Shen, Jen-Cheng Wang, Yung-Hsiang Lin, Tzer-En Nee, and Ray-Ming Lin, "Competition between Berthelot-type and Arrhernius-type spectral luminescence in InGaN/GaN light-emitting diodes", NanoSingapore 2006: IEEE Conference on Emerging Technologies – Nanoelectronics, Singapore, January 10-13 (2006).
  38. Kuo-Hsing Chen, An-Pin Wang, Tzer-En Nee, Ray-Ming Lin, and Hsien-Chin Chiu, "Characterizations of InGaN/GaN light emitting diodes with micro-hole arrayed indium-tin-oxide", NanoSingapore 2006: IEEE Conference on Emerging Technologies – Nanoelectronics, Singapore, January 10-13 (2006).
  39. Jen-Chih Li, Tzer-En Nee, Liann-be Chang, and Ray-Ming Lin, "Brightness Improvement and limited Forward Voltage of the AlGaInP MQW LED with Wet-Oxidation by Taguchi Method", NanoSingapore 2006: IEEE Conference on Emerging Technologies – Nanoelectronics, Singapore, January 10-13 (2006).
  40. Y. F. Wu, J. C. Lee, T. E. Nee, R. M. Lin, and R. Y. Cheng, "Temperature and Excitation Dependence of Photoluminescence From InAs/GaAs Quantum Dot Heterostructures", NanoSingapore 2006: IEEE Conference on Emerging Technologies – Nanoelectronics, Singapore, January 10-13 (2006).
  41. Po-Chun Lin, Chih-Chun Shen, Jen-Cheng Wang, Tzer-En Nee, and Ray-Ming Lin, "Surface-state charge fluctuations on the carrier dynamics in InGaN/GaN blue light-emitting diodes with multiquantum barriers", Photonics Europe 2006, Strasbourg, France, April 3-7 (2006).
  42. Jen-Cheng Wang, Kuo-Hsing Chen, Da-Chuan Kuo, Ya-Fen Wu, Tzer-En Nee, and Ray-Ming Lin, "Cross sections for the effects of high temperature on the optical properties of InGaN/GaN blue light-emitting diodes with multiquantum barriers", The Thirteenth International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, Japan, May 22-26 (2006).
  43. Da-Chuan Kuo, Jen-Cheng Wang, Jen-Chih Li, Hui-Tang Shen, Ya-Fen Wu, Yuan-Chieh Lu, Yung-Hsiang Lin, Ray-Ming Lin, Tzer-En Nee, Yi-Lun Chou, and Meng-Chyi Wu, "Structural and optical investigations of GaN epilayer grown on patterned-sapphire substrates", The Thirteenth International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, Japan, May 22-26 (2006).
  44. J. C. Lee, Y. F. Wu, T. E. Nee, R. M. Lin, R. Y. Cheng, and J. H. Fang, "Carrier relaxation and thermal escape in self-assembled InAs/GaAs quantum-dot heterostructures", The Thirteenth International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, Japan, May 22-26 (2006).
  45. Po-Chun Lin, Chih-Chun Shen, Jen-Cheng Wang, Ray-Ming Lin, and Tzer-En Nee, "Surface-state charge fluctuations on the carrier dynamics in InGaN/GaN blue light-emitting diodes with multiquantum barriers", Proc. SPIE 6184, pp. 61841L (2006). (EI)
  46. Ray-Ming Lin, Jen-Chih Li, and Tzer-En Nee, "Brightness Improvement and limited Forward Voltage of the AlGaInP MQW LED with Wet-Oxidation by Taguchi Method", Proceeding of  NanoSingapore 2006: IEEE Conference on Emerging Technologies – Nanoelectronics, Page(s): 245-248 (2006). (EI)
  47. Tzer-En Nee, Jen-Cheng Wang, and Ray-Ming Lin, "Effect of multiquantum barriers on performance of InGaN/GaN multiple-quantum-well light-emitting diodes", Proceeding of  NanoSingapore 2006: IEEE Conference on Emerging Technologies – Nanoelectronics, Page(s): 360-365 (2006). (EI)
  48. Tzer-En Nee, Ya-Fen Wu, Ray-Ming Lin, and Jiunn-Chyi Lee, "Temperature and Excitation Dependence of Photoluminescence Spectra of InAs/GaAs Quantum Dot Heterostructure, Proceeding of  NanoSingapore 2006: IEEE Conference on Emerging Technologies – Nanoelectronics, Page(s): 433-437 (2006). (EI)

Patents

  1. 林瑞明、倪澤恩、鄒明仁、方博仁、張希洽，"具電流侷限分佈之發光二極體及其製法"，中華民國專利：發明第I264832號(2006/10/21).
  2. 林瑞明、林宗翰、陳乃權、施權峰、方博仁、王瑞瑜、倪澤恩，"應用多重量子能障之藍光發光元件"，中華民國專利：發明第I232601號(2005/05/11).
  3. 陳國仁、林瑞明、倪澤恩，"具分波合波功能之多功器"，中華民國專利：發明第I226766號(2005/01/11).
  4. 林瑞明、倪澤恩，"具調光功能之日光燈"，中華民國專利：發明第I220641號(2004/08/21).
  5. 林瑞明、倪澤恩，"具殺菌功能之刮鬍刀"，中華民國專利：新型第00580979號(2004/03/21)、日本新型專利第3096298號(2003/2/20).
  6. 陳國仁、林瑞明、倪澤恩，"光功率平坦化及兼具雷射二極體光功率(電流量)補償效益之合波器"，中華民國專利：發明第200426417號(2004/12/01).
  7. 林瑞明、倪澤恩，"除臭抑菌之光觸媒牙刷"，中華民國專利：發明第200425857號(2004/12/01).
  8. 林瑞明、倪澤恩、沈暉堂、方博仁、王瑞瑜，"一種具有氮化合物介穩式應力釋放緩衝層之磊晶成長方法"，中華民國專利：發明第200409203號(2004/06/01).
  9. 林瑞明、倪澤恩、沈暉堂、方博仁、王瑞瑜，"降低半導體材料與電極接觸層間介面能階之製造方法"，中華民國專利：發明第200300052號(2003/05/01).
回上一頁